Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories

• Published in: IEEE transactions on nanotechnology Vol. 4; no. 3; pp. 360 - 368
• Main Authors: Perniola, L., Bernardini, S., Iannaccone, G., Masson, P., Barbara De Salvo, Ghibaudo, G., Gerardi, C.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.05.2005; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Analytical models; Applied sciences; Channel hot electron injection; Charge; Design automation; Device modeling; discrete-trap memory; Electric charge; Electric variables; Electron traps; Electronics; Engineering Sciences; Exact sciences and technology; Flash memory; Integrated circuits; Integrated circuits by function (including memories and processors); Mathematical analysis; Mathematical models; Micro and nanotechnologies; Microelectronics; Molecular electronics, nanoelectronics; nanocrystal memory; Nanocrystals; Nonuniform; Nonvolatile memory; Numerical simulation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Studies; Threshold voltage; Trapped charge; Volt-ampere characteristics; Voltage current curve; Circuit design; Modeling; Nanoelectronics; nanocrystal memory; Flash memory; Non volatile memory; discrete-trap memory; Integrated circuit; Analytical method; Numerical simulation; Computer aided design; Comparative study; Nanocrystal; Device modeling; Electrical characteristic; nonvolatile memory
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2005.847033

We propose an analytical model of the effects of a nonuniform distribution of trapped charge on the electrical characteristics and on the perspectives of 2-bit operation of discrete-trap memories. To keep the model tractable, we consider an idealized nonuniform distribution, represented by a step function, so that the concentration of trapped charge can assume only two possible values in two different regions. Notwithstanding the simplicity of our assumptions, which limits the range of validity of our model to the subthreshold and weak inversion regions of the I-V characteristics, we can investigate a series of important aspects for 2-bit storage of nonvolatile memories. Our model is then validated through comparison with detailed numerical simulations performed with a commercial technology computer-aided design tool, and with the experimental electrical characteristics of nanocrystal flash memories under different bias conditions. Finally, we provide a method, based on our model, to extract an "effective" distribution of trapped charge, in which all charge is uniformly distributed in a localized region close to the drain.