Pore filling of macropores prepared in p-type silicon by copper deposition
Copper deposition into ordered macroporous silicon prepared in p‐type substrates was investigated by immersion plating and electrochemical deposition in an aqueous solution containing Cu2+ ions. When the sample was immersed in 0.1 M CuSO4 solution at the open circuit potential, Cu crystallites are c...
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Published in | Physica status solidi. A, Applications and materials science Vol. 202; no. 8; pp. 1683 - 1687 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Berlin
WILEY-VCH Verlag
01.06.2005
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Summary: | Copper deposition into ordered macroporous silicon prepared in p‐type substrates was investigated by immersion plating and electrochemical deposition in an aqueous solution containing Cu2+ ions. When the sample was immersed in 0.1 M CuSO4 solution at the open circuit potential, Cu crystallites are clearly observed at the top surface and inside the pores. The deposition of Cu oxidizes the substrate simultaneously to SiO2. On the other hand, the potentiostatic deposition in the dark revealed that Cu deposits preferentially at the pore bottom and propagates towards the top surface. Furthermore, when the substrate was illuminated under cathodic potential, the Cu deposition was enhanced mainly at the top‐surface and around the pore walls. The different deposition behavior was compared and discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Bibliography: | ark:/67375/WNG-76XH9THM-3 ArticleID:PSSA200461226 istex:15EEDAF6F1D4F74B8ABA0FC5700FDD140999064B |
ISSN: | 1862-6300 1862-6319 |
DOI: | 10.1002/pssa.200461226 |