Suspended honeycomb nanowire ISFETs for improved stiction-free performance

• Published in: Nanotechnology Vol. 25; no. 34; pp. 345501 - 7
• Main Authors: Kim, Kihyun, Rim, Taiuk, Park, Chanoh, Kim, Donghoon, Meyyappan, M, Lee, Jeong-Soo
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 29.08.2014; Institute of Physics
• Subjects: Applied sciences; Biosensors; Channels; Cross-disciplinary physics: materials science; rheology; Devices; Drains; Electronics; Exact sciences and technology; gate-all-around (GAA); General equipment and techniques; Honeycomb; Honeycomb construction; honeycomb structure; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; ion-sensitive field effect transistor; Materials science; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanostructure; Nanowires; Performance enhancement; pH sensing; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; stiction; suspended nanowire; top-down; Transistors; Honeycomb lattices; pH value; Field effect transistors; Drain current; Nanowires; Biosensors; Honeycomb structures; Nanostructured materials; Gates; Transconductance; Electrical characteristic
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/25/34/345501

This paper reports high performance ion-sensitive field-effect transistors (ISFETs) with a suspended honeycomb nanowire (SHNW) structure. The SHNW can provide a longer, stiction-free channel than that which is possible with a suspended straight nanowire (SSNW) for the realization of gate-all-around biosensors. Devices with SHNWs, SSNWs and conventional nanowires on the substrate have been fabricated using a top-down approach in order to compare their electrical performances. The SHNW devices exhibit excellent electrical characteristics such as lower subthreshold swing, higher transconductance and higher linear drain current. In addition, the SHNW ISFETs show better pH sensitivity than other ISFETs. Based on the results, the SHNW device appears promising for enhancing the intrinsic performance and ensuring the reliable operation of biosensor applications.