The effect of electrical stress on the leakage current of polycrystalline Si thin-film transistors fabricated by metal-induced lateral crystallization

• Published in: Thin solid films Vol. 466; no. 1; pp. 303 - 306
• Main Authors: Yoon, Yeo-Geon, Kim, Gi-Bum, Kim, Tae-Kyung, Lee, Byung-Il, Joo, Seung-Ki
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.11.2004; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity of specific materials; Electrical stress; Electronic transport in condensed matter; Elemental semiconductors; Exact sciences and technology; Metal-induced lateral crystallization; Physics; Polycrystalline Si; Thin-film transistors; Polycrystalline Si; Thin-film transistors; Electrical stress; Metal-induced lateral crystallization; Inorganic compounds; Semiconductor materials; Saturation; Crystallization; Polycrystals; Amorphous state; Thin film transistors; Leakage currents; Experimental study; Stress effects; Anomaly; Silicon; IV characteristic
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2004.02.037

The effects of electrical stress on the leakage current of polycrystalline Si (poly-Si) thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC) were investigated. It was found that the leakage current of MILC TFTs could be reduced by electrical stress ( V G<0, V D>0) and this effect was saturated in about 1000 s. In addition, asymmetric Ni-offset deposition is proposed. By this method, the boundary where the two MILC regions meet can be moved out of the channel region, consequently, resulting in a great reduction in leakage current and in an insensibility to electrical stress.