DC Hall coefficient of the strongly correlated Hubbard model

• Published in: npj quantum materials Vol. 5; no. 1
• Main Authors: Wang, Wen O., Ding, Jixun K., Moritz, Brian, Huang, Edwin W., Devereaux, Thomas P.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 24.07.2020; Nature Publishing Group
• Subjects: 639/766/119/1003; 639/766/119/995; 639/766/119/999; Carrier density; Computer simulation; Condensed Matter Physics; Correlation; Electronic properties and materials; Elementary excitations; Fermi surfaces; Hall effect; MATERIALS SCIENCE; Physics; Physics and Astronomy; Quantum fluids and solids; Quantum Physics; Structural Materials; Superconducting properties and materials; Surfaces and Interfaces; Thermal expansion; Thin Films; Topology; Transport properties
• ISSN: 2397-4648; 2397-4648
• DOI: 10.1038/s41535-020-00254-w

The Hall coefficient is related to the effective carrier density and Fermi surface topology in non-interacting and weakly interacting systems. In strongly correlated systems, the relation between the Hall coefficient and single-particle properties is less clear. Clarifying this relation would give insight into the nature of transport in strongly correlated materials that lack well-formed quasiparticles. In this work, we investigate the DC Hall coefficient of the Hubbard model using determinant quantum Monte Carlo in conjunction with a recently developed expansion of magneto-transport coefficients in terms of thermodynamic susceptibilities. At leading order in the expansion, we observe a change of sign in the Hall coefficient as a function of temperature and interaction strength, which we relate to a change in the topology of the apparent Fermi surface. We also combine our Hall coefficient results with optical conductivity values to evaluate the Hall angle, as well as effective mobility and effective mass based on Drude theory of metals.