Effect of negative substrate bias voltage on the nucleation and growth of Cu films during the initial stage of ion beam deposition

• Published in: Metals and materials international Vol. 14; no. 3; pp. 381 - 384
• Main Authors: Lim, Jae-Won, Choi, Good-Sun, Zhu, Yongfu, Isshiki, Minoru
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Metals and Materials 01.06.2008; Springer Nature B.V; 대한금속·재료학회
• Subjects: Atomic force microscopy; Bias; Characterization and Evaluation of Materials; Chemistry and Materials Science; Copper; DEPOSITION; Electric potential; Engineering Thermodynamics; Heat and Mass Transfer; Ion beams; IONS; Machines; Magnetic Materials; Magnetism; Manufacturing; Materials Science; Metallic Materials; NUCLEATION; Processes; Solid Mechanics; VOLTAGE; 재료공학; nucleation; copper; growth; substrate bias voltage; atomic force microscopy
• ISSN: 1598-9623; 2005-4149
• DOI: 10.3365/met.mat.2008.06.381

We focused the effect of a negative substrate bias voltage on the nucleation and growth of Cu films during the initial stage of ion beam deposition. The resultant microstructure of Cu films was observed by atomic force microscopy (AFM). It was found that Cu films with or without a negative substrate bias voltage have a different dependence of nucleation and growth. It was established that the mechanism of nucleation and growth of Cu films is changed to a progressive nucleation and lateral growth by a sufficient migration of adatoms accelerated by applying a negative substrate bias voltage.