Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors

• Published in: IEEE electron device letters Vol. 30; no. 2; pp. 139 - 141
• Main Authors: SHEU, Jeng-Tzong, HUANG, Po-Chun, SHEU, Tzu-Shiun, CHEN, Chen-Chia, CHEN, Lu-An
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Channels; Controllability; Crystallization; Density; Electronics; Etching; Exact sciences and technology; Fabrication; Gate-all-around (GAA); Leakage current; Lithography; Nanocomposites; Nanomaterials; Nanostructure; nanowire (NW); Nanowires; Optical films; Optoelectronic devices; Plasma applications; Plasma density; plasma treatment; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; short-channel effects (SCEs); Thin film transistors; thin-film transistor (TFT); Transistors; Voltage threshold; short-channel effects (SCEs); plasma treatment; thin-film transistor (TFT); nanowire (NW); Channel structure; Polycrystal; Plasma assisted processing; Short channel; GAA transistor; Light emitting diode; Grain boundary; Gate-all-around (GAA); Optoelectronic device; Controllability; Thin film transistor; Barrier height; Nanowires; Electrical characteristic
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2008.2009956

We have investigated the characteristics of gate-all-around (GAA) twin polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs). The NW channel and surrounding gate imparted the GAA twin NW TFT with superior channel controllability. Moreover, the combination of the high surface-to-volume ratio of the NW and the split channel structure led to highly efficient NH 3 plasma treatment, which reduced the effective grain-boundary trap-state density. The GAA twin NW TFT exhibited greatly improved electrical performance, including a lower threshold voltage, a steeper subthreshold swing (114 mV/dec), a higher on/off current ratio (> 10 8 ), and a virtual absence of drain-induced barrier lowering (13 mV/V).