Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film Transistors

• Published in: IEEE transactions on electron devices Vol. 56; no. 9; pp. 2165 - 2168
• Main Authors: Takechi, Kazushige, Nakata, Mitsuru, Eguchi, Toshimasa, Yamaguchi, Hirotaka, Kaneko, Setsuo
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.09.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphous silicon; Applied sciences; Crystal structure; Devices; Electronics; Exact sciences and technology; Logic gates; Mathematical models; MOSFETs; oxide semiconductor; Oxides; polycrystalline silicon (pc-Si); Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; structural disorder; tail-state distribution; Temperature; Temperature measurement; Thin film transistors; thin-film transistor (TFT); Transistors; Zinc; Amorphous material; MOSFET; Voltage dependence; Gate voltage; Exponential distribution; thin-film transistor (TFT); Polycrystal; tail-state distribution; Amorphous silicon; polycrystalline silicon (pc-Si); structural disorder; oxide semiconductor; Thin film transistor; Transconductance
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2009.2026392

Our experimental results for amorphous InGaZnO 4 and polycrystalline ZnO TFTs show a gate-voltage-dependent transconductance that is somewhat different from that for crystalline MOSFETs. We show that a model of the exponential distribution of band tail states can be used to describe the above-threshold behavior of Zn-based oxide TFTs.