Tungsten Oxide Buffer Layers Fabricated in an Inert Sol-Gel Process at Room-Temperature for Blue Organic Light-Emitting Diodes

WO3 deposition from tungsten ethoxide precursor solutions at room temperature is demonstrated. The W(OEt)6 precursor can be converted under inert conditions and hence avoids sample contamination with oxygen, opening a pathway to more stable devices. The stoichiometry of all WO3 layers and the optoel...

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Published inAdvanced materials (Weinheim) Vol. 25; no. 30; pp. 4113 - 4116
Main Authors Höfle, Stefan, Bruns, Michael, Strässle, Stefan, Feldmann, Claus, Lemmer, Uli, Colsmann, Alexander
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 14.08.2013
WILEY‐VCH Verlag
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Summary:WO3 deposition from tungsten ethoxide precursor solutions at room temperature is demonstrated. The W(OEt)6 precursor can be converted under inert conditions and hence avoids sample contamination with oxygen, opening a pathway to more stable devices. The stoichiometry of all WO3 layers and the optoelectronic performance of the respective SMOLEDs well match thermally evaporated WO3 and its corresponding SMOLEDs. The solution processed WO3 hole injection layers enable the fabrication of blue phosphorescent OLEDs with low onset voltage and current efficiencies of up to 14 cd A−1.
Bibliography:istex:2EBE740C3F7418B5AA0F07AE9BB71D7B37DA29F1
ArticleID:ADMA201301627
ark:/67375/WNG-WC5HDM6K-8
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201301627