ZnO: growth, doping & processing

A review is given here of recent results in developing improved control of growth, doping, and fabrication processes for ZnO devices with possible applications to ultraviolet (UV) light emitters, spin functional devices, gas sensors, transparent electronics, and surface acoustic wave devices. ZnO ca...

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Bibliographic Details
Published inMaterials today (Kidlington, England) Vol. 7; no. 6; pp. 34 - 40
Main Authors Norton, D.P., Heo, Y.W., Ivill, M.P., Ip, K., Pearton, S.J., Chisholm, M.F., Steiner, T.
Format Journal Article
LanguageEnglish
Published United States Elsevier Ltd 01.06.2004
Subjects
ACOUSTICS
BINDING ENERGY
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DEFECTS
ELECTRICAL PROPERTIES
ENERGY LEVELS
FABRICATION
IMPURITIES
INTERSTITIALS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
OXIDES
PHOSPHORS
PROCESSING
SEMICONDUCTOR RESISTORS
SPIN
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Summary:A review is given here of recent results in developing improved control of growth, doping, and fabrication processes for ZnO devices with possible applications to ultraviolet (UV) light emitters, spin functional devices, gas sensors, transparent electronics, and surface acoustic wave devices. ZnO can be grown on cheap substrates such as glass at relatively low temperatures and may have advantages over the GaN system in some of these applications.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
DE-AC05-00OR22725
USDOE Office of Science (SC)
ISSN:1369-7021
1873-4103
DOI:10.1016/S1369-7021(04)00287-1