Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study

• Published in: Ain Shams Engineering Journal Vol. 6; no. 2; pp. 501 - 509
• Main Authors: Abouelatta-Ebrahim, Mohamed, Shaker, Ahmed, Sayah, Gihan T., Gontrand, Christian, Zekry, Abdelhalim
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.2015; Elsevier
• Subjects: 0.35 μm BiCMOS; 0.35 μm BiCMOS; Breakdown voltage; nLDMOS; RESURF; Smart power integrated circuit (SPIC); Specific ON-resistance; Smart power integrated circuit (SPIC); Specific ON-resistance; Breakdown voltage; RESURF; 0.35μm BiCMOS; nLDMOS

In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using advanced 2D numerical simulation. The results show...