Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study
In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using advanced 2D numerical simulation. The results show...
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Published in | Ain Shams Engineering Journal Vol. 6; no. 2; pp. 501 - 509 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.06.2015
Elsevier |
Subjects | |
Online Access | Get full text |
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