Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study

In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using advanced 2D numerical simulation. The results show...

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Published inAin Shams Engineering Journal Vol. 6; no. 2; pp. 501 - 509
Main Authors Abouelatta-Ebrahim, Mohamed, Shaker, Ahmed, Sayah, Gihan T., Gontrand, Christian, Zekry, Abdelhalim
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2015
Elsevier
Subjects
0.35 μm BiCMOS
0.35 μm BiCMOS
Breakdown voltage
nLDMOS
RESURF
Smart power integrated circuit (SPIC)
Specific ON-resistance
Smart power integrated circuit (SPIC)
Specific ON-resistance
Breakdown voltage
RESURF
0.35μm BiCMOS
nLDMOS
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Abstract In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using advanced 2D numerical simulation. The results show excellent RON,SP/BV trade-off (BV≈400V and RON,SP=9.5mΩcm2 for Tepi=4μm and LDrift=17μm) without any added process complexity. The maximum obtained drain current is 1.8mA/μm at a gate voltage of 5V. The designed device is suitable for smart power integration.
AbstractList In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35 μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using advanced 2D numerical simulation. The results show excellent RON,SP/BV trade-off (BV ≈ 400 V and RON,SP = 9.5 mΩ cm2 for Tepi = 4 μm and LDrift = 17 μm) without any added process complexity. The maximum obtained drain current is 1.8 mA/μm at a gate voltage of 5 V. The designed device is suitable for smart power integration.
In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using advanced 2D numerical simulation. The results show excellent RON,SP/BV trade-off (BV≈400V and RON,SP=9.5mΩcm2 for Tepi=4μm and LDrift=17μm) without any added process complexity. The maximum obtained drain current is 1.8mA/μm at a gate voltage of 5V. The designed device is suitable for smart power integration.
Author Abouelatta-Ebrahim, Mohamed
Zekry, Abdelhalim
Gontrand, Christian
Shaker, Ahmed
Sayah, Gihan T.
Author_xml – sequence: 1
  givenname: Mohamed
  surname: Abouelatta-Ebrahim
  fullname: Abouelatta-Ebrahim, Mohamed
  email: m.abouelatta@eng.asu.edu.eg
  organization: Faculty of Engineering, Ain Shams University, Cairo, Egypt
– sequence: 2
  givenname: Ahmed
  surname: Shaker
  fullname: Shaker, Ahmed
  email: ahmed.shaker@eng.asu.edu.eg, ashaker2k@yahoo.com
  organization: Faculty of Engineering, Ain Shams University, Cairo, Egypt
– sequence: 3
  givenname: Gihan T.
  surname: Sayah
  fullname: Sayah, Gihan T.
  email: gtsayah@hotmail.com
  organization: Nuclear Materials Authority, Cairo, Egypt
– sequence: 4
  givenname: Christian
  surname: Gontrand
  fullname: Gontrand, Christian
  email: Christian.Gontrand@insa-lyon.fr
  organization: Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
– sequence: 5
  givenname: Abdelhalim
  surname: Zekry
  fullname: Zekry, Abdelhalim
  email: aaazekry@hotmail.com
  organization: Faculty of Engineering, Ain Shams University, Cairo, Egypt
BookMark eNp9kMtOAzEMRbMAiecPsMoPdHBCZpIgNoi3VFSpBbaRJ8mUVEMGJQNS_560RSxZ-dryPbLvEdmLQ_SEnDGoGLDmfFVh9quKAxMV4xXAxR455KBhIoTUB-Q059BC0VzVqj4kb7c-h2Wkdog5OJ9wDEXRoaPvYflOv4d-xKWn87vF6_yexunt82xxSa8jxYj9egwW-yIdjV8fPm27PH659QnZ77DP_vS3HpPX-7uXm8fJdPbwdHM9nVihYJy0TrNaKRANk6oRnVBOaQltU0OrHUotHTrPOKtBtq6TZa8TjLXgrADN8OKYPO24bsCV-UzhA9PaDBjMdjCkpcFUruy96ThYVNK2jZKCiRpdo7XmKNC2XNSusPiOZdOQc_LdH4-B2YRrVmYTrtmEaxg3JdxiutqZfPnyO_hksg0-Wu9C8nYsZ4T_7D-oQ4Uf
CitedBy_id crossref_primary_10_1016_j_mejo_2023_105911
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Cites_doi 10.1016/S0026-2692(00)00012-4
10.1109/16.47787
10.1109/TED.2004.835163
10.1109/ISIE.2010.5637652
10.1051/epjap/2011100138
10.1109/5.931471
10.1109/TED.2003.821383
ContentType Journal Article
Copyright 2014 Faculty of Engineering, Ain Shams University
Copyright_xml – notice: 2014 Faculty of Engineering, Ain Shams University
DBID 6I.
AAFTH
AAYXX
CITATION
DOA
DOI 10.1016/j.asej.2014.12.003
DatabaseName ScienceDirect Open Access Titles
Elsevier:ScienceDirect:Open Access
CrossRef
DOAJ Directory of Open Access Journals
DatabaseTitle CrossRef
DatabaseTitleList

Database_xml – sequence: 1
  dbid: DOA
  name: DOAJ Directory of Open Access Journals
  url: https://www.doaj.org/
  sourceTypes: Open Website
DeliveryMethod fulltext_linktorsrc
EndPage 509
ExternalDocumentID oai_doaj_org_article_f20ca87cb6874145ad69992a4acb245d
10_1016_j_asej_2014_12_003
S2090447914001750
GroupedDBID 6I.
AAFTH
ALMA_UNASSIGNED_HOLDINGS
M~E
AAYXX
CITATION
GROUPED_DOAJ
ID FETCH-LOGICAL-c480t-bd9158804617864f48d8970b650b9da797dade121507bdf7461f411b0dc4091a3
IEDL.DBID DOA
ISSN 2090-4479
IngestDate Tue Oct 22 15:11:08 EDT 2024
Fri Aug 23 00:41:20 EDT 2024
Sat Apr 29 22:48:20 EDT 2023
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 2
Keywords Smart power integrated circuit (SPIC)
Specific ON-resistance
Breakdown voltage
RESURF
0.35μm BiCMOS
nLDMOS
Language English
License http://creativecommons.org/licenses/by-nc-nd/4.0
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c480t-bd9158804617864f48d8970b650b9da797dade121507bdf7461f411b0dc4091a3
OpenAccessLink https://doaj.org/article/f20ca87cb6874145ad69992a4acb245d
PageCount 9
ParticipantIDs doaj_primary_oai_doaj_org_article_f20ca87cb6874145ad69992a4acb245d
crossref_primary_10_1016_j_asej_2014_12_003
elsevier_sciencedirect_doi_10_1016_j_asej_2014_12_003
PublicationCentury 2000
PublicationDate 2015-06-01
PublicationDateYYYYMMDD 2015-06-01
PublicationDate_xml – month: 06
  year: 2015
  text: 2015-06-01
  day: 01
PublicationDecade 2010
PublicationTitle Ain Shams Engineering Journal
PublicationYear 2015
Publisher Elsevier B.V
Elsevier
Publisher_xml – name: Elsevier B.V
– name: Elsevier
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SSID ssib044728585
Score 2.0586708
Snippet In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key...
In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35 μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key...
SourceID doaj
crossref
elsevier
SourceType Open Website
Aggregation Database
Publisher
StartPage 501
SubjectTerms 0.35 μm BiCMOS
0.35 μm BiCMOS
Breakdown voltage
nLDMOS
RESURF
Smart power integrated circuit (SPIC)
Specific ON-resistance
Title Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study
URI https://dx.doi.org/10.1016/j.asej.2014.12.003
https://doaj.org/article/f20ca87cb6874145ad69992a4acb245d
Volume 6
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV3PS8MwFA6ykxdRVJy_yMGbFJM2aVNv020McQrqZLeS9DXgkE6ku_q3-5K00pNevJS2hKR8SfO9vLx8j5ALUJVRuPCJALiMRMKqSBkto0SBFmWVxsbv4M8f0tlC3C3lspfqy8WEBXngANyVjVmpVVaaVCH5CakhRZsm1kKXJhYS_OzLZW8xhSNJiCx2G14usxzLWYTPeXtiJgR3IUOsXFyX8L7ALmNWy0pevL9HTj3Cme6SndZSpKPwhXtkq6r3yevYR1zQss2zGfxtdG2p0x2mONc0OEFQhHXxNKX1_Xj--HxNRzXVTnzE-63xFmi9CTs179Tryx6QxXTycjuL2tQIUSkUayIDOZf46wl3wi8VVihQecYM2lsmB53lGWionHIEywzYDMtZwblhUOKCjuvkkAzqdV0dEaoAmIVEg40B2T1V0hgdg-Y8t6WxYkguO2iKj6CAUXShYavCAVk4IAseO53RIblx6P2UdOrV_gX2adH2afFXnw6J7LAvWkMgEDxW9fZL48f_0fgJ2cYqZQgHOyWD5nNTnaHh0ZhzP8bwOv-afAMTFtTL
link.rule.ids 315,786,790,870,2115,27955,27956
linkProvider Directory of Open Access Journals
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Design+considerations+of+high+voltage+RESURF+nLDMOS%3A+An+analytical+and+numerical+study&rft.jtitle=Ain+Shams+Engineering+Journal&rft.au=Mohamed+Abouelatta-Ebrahim&rft.au=Ahmed+Shaker&rft.au=Gihan+T.+Sayah&rft.au=Christian+Gontrand&rft.date=2015-06-01&rft.pub=Elsevier&rft.issn=2090-4479&rft.volume=6&rft.issue=2&rft.spage=501&rft.epage=509&rft_id=info:doi/10.1016%2Fj.asej.2014.12.003&rft.externalDBID=DOA&rft.externalDocID=oai_doaj_org_article_f20ca87cb6874145ad69992a4acb245d
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2090-4479&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2090-4479&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2090-4479&client=summon