Growth and anisotropy of La(O, F)FeAs thin films deposited by pulsed laser deposition

LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by pulsed laser deposition (PLD). Room temperature deposition and post annealing of the films yield fil...

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Published inSuperconductor science & technology Vol. 21; no. 12; pp. 122001 - 122001 (4)
Main Authors Backen, E, Haindl, S, Niemeier, T, Hühne, R, Freudenberg, T, Werner, J, Behr, G, Schultz, L, Holzapfel, B
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.12.2008
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Summary:LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by pulsed laser deposition (PLD). Room temperature deposition and post annealing of the films yield films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and the onset of superconductivity at 11 K. mu0Hc 2(T) was determined by resistive measurements and yield mu0Hc 2 values of 3 T at 3.6 K for and 6 T at 6.4 K for.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0953-2048
1361-6668
DOI:10.1088/0953-2048/21/12/122001