Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride

• Published in: Thin solid films Vol. 516; no. 5; pp. 637 - 640
• Main Authors: Abe, Katsuya, Nagasaka, Yohei, Kida, Takahiro, Yamakami, Tomohiko, Hayashibe, Rinpei, Kamimura, Kiichi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 15.01.2008; Elsevier Science
• Subjects: 3C-SiC; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; CVD; Exact sciences and technology; H 2 dilution; Hot-wire; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; SiF 4; Theory and models of film growth; CVD; H 2 dilution; Hot-wire; 3C-SiC; SiF 4; Hot filament chemical vapor deposition; Methane; Pressure effects; SiF4; Polycrystals; Etching; Film growth; Thin films; Silicon carbide; Tungsten; H2 dilution; Growth mechanism; Silicon fluorides; Silicon

SiC films were synthesized by hot-wire chemical vapor deposition using a tungsten filament and a gas mixture of SiF 4 and CH 4. The etching of the substrate instead of the film growth occurred on the samples prepared using only source gases without H 2 dilution. The atomic or molecular hydrogen was...