Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride

• Published in: Thin solid films Vol. 516; no. 5; pp. 637 - 640
• Main Authors: Abe, Katsuya, Nagasaka, Yohei, Kida, Takahiro, Yamakami, Tomohiko, Hayashibe, Rinpei, Kamimura, Kiichi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 15.01.2008; Elsevier Science
• Subjects: 3C-SiC; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; CVD; Exact sciences and technology; H 2 dilution; Hot-wire; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; SiF 4; Theory and models of film growth; CVD; H 2 dilution; Hot-wire; 3C-SiC; SiF 4; Hot filament chemical vapor deposition; Methane; Pressure effects; SiF4; Polycrystals; Etching; Film growth; Thin films; Silicon carbide; Tungsten; H2 dilution; Growth mechanism; Silicon fluorides; Silicon
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2007.06.199

SiC films were synthesized by hot-wire chemical vapor deposition using a tungsten filament and a gas mixture of SiF 4 and CH 4. The etching of the substrate instead of the film growth occurred on the samples prepared using only source gases without H 2 dilution. The atomic or molecular hydrogen was believed to control the density of radicals containing F in a gas phase or on a growth surface. Polycrystalline 3C-SiC(111) films were successfully obtained at substrate temperatures lower than 500 °C by using H 2 dilution. The growth mode limited by source-gas supply was found to be important to obtain polycrystalline SiC films. The SiC film grown at higher deposition pressure was amorphous and contained no Si–H x bonds but 6% fluorine. In SiF 4/CH 4/H 2 system, the radicals containing F are considered to play very important roles in the reactions both on a growth surface and in a gas-phase.