Precursor-Derived Si-B-C-N Ceramics: Oxidation Kinetics

The oxidation behavior of three precursor‐derived ceramics—Si4.46BC7.32N4.40 (AMF2p), Si2.72BC4.51N2.69 (AMF3p), and Si3.08BC4.39N2.28 (T2/1p)—was investigated at 1300° and 1500°C. Scale growth at 1500°C in air can be approximated by a parabolic rate law with rate constants of 0.0599 and 0.0593 μm2/...

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Bibliographic Details
Published inJournal of the American Ceramic Society Vol. 84; no. 10; pp. 2184 - 2188
Main Authors Butchereit, Elke, Nickel, Klaus G., Müller, Anita
Format Journal Article
LanguageEnglish
Published Westerville, Ohio American Ceramics Society 01.10.2001
Wiley Subscription Services, Inc
Subjects
kinetics
oxidation
precursors
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Summary:The oxidation behavior of three precursor‐derived ceramics—Si4.46BC7.32N4.40 (AMF2p), Si2.72BC4.51N2.69 (AMF3p), and Si3.08BC4.39N2.28 (T2/1p)—was investigated at 1300° and 1500°C. Scale growth at 1500°C in air can be approximated by a parabolic rate law with rate constants of 0.0599 and 0.0593 μm2/h for AMF3p and T2/1p, respectively. The third material does not oxidize according to a parabolic rate law, but has a similar scale thickness after 100 h. The results show that at least within the experimental times these ceramics develop extremely thin scales, thinner than pure SiC or Si3N4.
Bibliography:istex:3D42BE76E3D0DDC3D15F459513B9A7AC59445164
ArticleID:JACE2184
ark:/67375/WNG-2VGL80C8-C
R. Riedel—contributing editor
Supported by the Deutsche Forschungsgemeinschaft under Grant Nos. Ni299/5‐1, ‐2, and ‐3.
Member, American Ceramic Society.
Invited paper for the 2nd International Workshop on “Ultrahigh Temperature Polymer Derived Ceramics” (Boulder, CO, July 23–29, 2000).
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SourceType-Scholarly Journals-1
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ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.2001.tb00985.x