Analytical evaluation of scattering parameters for equivalent circuit of through silicon via array
The high level of integration in digital electronic chips based on three-dimensional (3D) technology requires accurate modelling of the vertical interconnects (the through silicon vias – TSVs). An accurate prediction of the signal propagation and crosstalk of the TSVs cannot be based on the single v...
Saved in:
Published in | Electronics letters Vol. 51; no. 13; pp. 1025 - 1027 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
The Institution of Engineering and Technology
25.06.2015
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | The high level of integration in digital electronic chips based on three-dimensional (3D) technology requires accurate modelling of the vertical interconnects (the through silicon vias – TSVs). An accurate prediction of the signal propagation and crosstalk of the TSVs cannot be based on the single via since the interaction among adjacent TSVs in a high density array cannot be neglected. An algorithm is proposed that extends the approach for modelling a TSV array with a complete analytical evaluation of the final multiport scattering parameter matrix, thus making the electromagnetic modelling of such structures more efficient without relying on commercial circuit solvers. The proposed method requires much less processing time with respect to commercial solvers with a comparable accuracy. |
---|---|
AbstractList | The high level of integration in digital electronic chips based on three‐dimensional (3D) technology requires accurate modelling of the vertical interconnects (the through silicon vias – TSVs). An accurate prediction of the signal propagation and crosstalk of the TSVs cannot be based on the single via since the interaction among adjacent TSVs in a high density array cannot be neglected. An algorithm is proposed that extends the approach for modelling a TSV array with a complete analytical evaluation of the final multiport scattering parameter matrix, thus making the electromagnetic modelling of such structures more efficient without relying on commercial circuit solvers. The proposed method requires much less processing time with respect to commercial solvers with a comparable accuracy. |
Author | de Paulis, F Orlandi, A Cecchetti, R Piersanti, S Fan, J |
Author_xml | – sequence: 1 givenname: R surname: Cecchetti fullname: Cecchetti, R organization: INTECS S.p.A., loc. Boschetto, 67100, L'Aquila, Italy – sequence: 2 givenname: S surname: Piersanti fullname: Piersanti, S organization: UAq EMC Laboratory, Department of Industrial and Information Engineering and Economics, University of L'Aquila, 67100, L'Aquila, Italy – sequence: 3 givenname: F surname: de Paulis fullname: de Paulis, F organization: UAq EMC Laboratory, Department of Industrial and Information Engineering and Economics, University of L'Aquila, 67100, L'Aquila, Italy – sequence: 4 givenname: A surname: Orlandi fullname: Orlandi, A email: antonio.orlandi@univaq.it organization: UAq EMC Laboratory, Department of Industrial and Information Engineering and Economics, University of L'Aquila, 67100, L'Aquila, Italy – sequence: 5 givenname: J surname: Fan fullname: Fan, J organization: MST EMC Laboratory, Missouri University of Science and Technology, Rolla, MO, USA |
BookMark | eNp90MGKFDEQBuAgKziue_MBcvDgwR6rkk739HFdZlVo8KLgLVRnqncjmc5skt5l3t4eRtCDSg5F4OOv4n8pLqY4sRCvEdYIdfeew1oBmjWqxjwTK9QGqg7x-4VYAaCuDHb1C3GVsx8Aa6wbqHElhuuJwrF4R0HyI4WZio-TjKPMjkrh5Kc7eaBEe14-WY4xSX6Y_UJ5KtL55GZfTr7cpzjf3cvsg3dLxKMnSSnR8ZV4PlLIfPVrXopvt9uvN5-q_svHzzfXfeXqDUBlWtcAOiZABS0pvYHadI6GQbfK6A12hkiBQT02iLt2pzqzM9oMjkzdEutL8face0jxYeZc7N5nxyHQxHHOFjewPKMULvTdmboUc0482kPye0pHi2BPbVoO9tSmPbW5cHPmTz7w8b_WbvtefbgF1XTw-yLPxf6Ic1q6zv9a8eYvdNv_kXzYjfonW5qSTg |
CitedBy_id | crossref_primary_10_1109_LMWC_2017_2734761 crossref_primary_10_1109_TCPMT_2023_3343712 crossref_primary_10_1109_TEMC_2016_2608981 crossref_primary_10_1109_TCPMT_2018_2879977 crossref_primary_10_1109_TIM_2017_2654068 crossref_primary_10_1587_elex_17_20190735 crossref_primary_10_1109_TEMC_2016_2587824 crossref_primary_10_1109_TEMC_2017_2696563 crossref_primary_10_1155_2015_470952 crossref_primary_10_1109_TEMC_2017_2731794 |
Cites_doi | 10.1109/TCPMT.2013.2279688 10.1109/TEMC.2010.2072784 10.1109/TCAD.2012.2228740 10.1109/TCPMT.2014.2372771 |
ContentType | Journal Article |
Copyright | The Institution of Engineering and Technology 2020 The Institution of Engineering and Technology |
Copyright_xml | – notice: The Institution of Engineering and Technology – notice: 2020 The Institution of Engineering and Technology |
DBID | AAYXX CITATION 7SP 8FD F28 FR3 L7M |
DOI | 10.1049/el.2015.1265 |
DatabaseName | CrossRef Electronics & Communications Abstracts Technology Research Database ANTE: Abstracts in New Technology & Engineering Engineering Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Engineering Research Database Technology Research Database Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering Electronics & Communications Abstracts |
DatabaseTitleList | Engineering Research Database |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1350-911X |
EndPage | 1027 |
ExternalDocumentID | 10_1049_el_2015_1265 ELL2BF02690 |
Genre | rapidPublication |
GroupedDBID | 0R 24P 29G 4IJ 5GY 6IK 8VB AAJGR ABPTK ABZEH ACGFS ACIWK AENEX ALMA_UNASSIGNED_HOLDINGS BFFAM CS3 DU5 ESX F5P HZ IFIPE IPLJI JAVBF KBT LAI LOTEE LXI LXO LXU M43 MS NADUK NXXTH O9- OCL P2P QWB RIE RNS RUI TN5 U5U UNMZH UNR WH7 X ZL0 ZZ -4A -~X .DC 0R~ 0ZK 1OC 2QL 3EH 4.4 8FE 8FG 96U AAHHS AAHJG ABJCF ABQXS ACCFJ ACESK ACGFO ACXQS ADEYR ADIYS ADZOD AEEZP AEGXH AEQDE AFAZI AFKRA AI. AIAGR AIWBW AJBDE ALUQN ARAPS AVUZU BBWZM BENPR BGLVJ CCPQU EBS EJD ELQJU F20 F8P GOZPB GROUPED_DOAJ GRPMH HCIFZ HZ~ IAO IFBGX K1G K7- L6V M7S MCNEO MS~ OK1 P0- P62 PTHSS R4Z RIG VH1 ~ZZ AAYXX CITATION ITC 7SP 8FD F28 FR3 L7M |
ID | FETCH-LOGICAL-c4800-57c601cea01207a2380459cabb372538195aa20513f611d7d295d535bca547ae3 |
IEDL.DBID | 24P |
ISSN | 0013-5194 1350-911X |
IngestDate | Fri Apr 12 10:00:44 EDT 2024 Thu Sep 26 17:35:18 EDT 2024 Sat Aug 24 01:05:12 EDT 2024 Tue Jan 05 21:46:17 EST 2021 Thu May 09 18:35:09 EDT 2019 |
IsDoiOpenAccess | false |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 13 |
Keywords | digital electronic chip integration vertical interconnects scattering parameter analytical evaluation signal propagation S-parameters three-dimensional technology equivalent circuits multiport scattering parameter matrix integrated circuit interconnections electromagnetic modelling through silicon via array TSV crosstalk equivalent circuit 3D technology crosstalk high density array three-dimensional integrated circuits |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c4800-57c601cea01207a2380459cabb372538195aa20513f611d7d295d535bca547ae3 |
Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
OpenAccessLink | https://onlinelibrary.wiley.com/doi/pdfdirect/10.1049/el.2015.1265 |
PQID | 1808085221 |
PQPubID | 23500 |
PageCount | 3 |
ParticipantIDs | wiley_primary_10_1049_el_2015_1265_ELL2BF02690 crossref_primary_10_1049_el_2015_1265 proquest_miscellaneous_1808085221 iet_journals_10_1049_el_2015_1265 |
ProviderPackageCode | RUI |
PublicationCentury | 2000 |
PublicationDate | 2015-06-25 |
PublicationDateYYYYMMDD | 2015-06-25 |
PublicationDate_xml | – month: 06 year: 2015 text: 2015-06-25 day: 25 |
PublicationDecade | 2010 |
PublicationTitle | Electronics letters |
PublicationYear | 2015 |
Publisher | The Institution of Engineering and Technology |
Publisher_xml | – name: The Institution of Engineering and Technology |
References | Yao, W. (C1) 2013; 32 Piersanti, S. (C3) 2015; pp Han, K.J. (C2) 2015; 5 de Paulis, F.; Zhang, Y-J.; Fan, J. (C5) 2010; 52 Ndip, I. (C4) 2014; 4 2013; 32 2010; 52 2015; 5 2014; 4 2015; pp Han K.J. (e_1_2_5_3_1) 2015; 5 Piersanti S. (e_1_2_5_4_1) 2015 Yao W. (e_1_2_5_2_1) 2013; 32 e_1_2_5_6_1 e_1_2_5_5_1 |
References_xml | – volume: 5 start-page: 108 issue: 1 year: 2015 end-page: 118 ident: C2 article-title: Modeling of through-silicon via (TSV) interposer considering depletion capacitance and substrate layer thickness effects publication-title: IEEE Trans. Compon. Packag. Manuf. Technol. contributor: fullname: Han, K.J. – volume: 4 start-page: 504 issue: 3 year: 2014 end-page: 515 ident: C4 article-title: Analytical, numerical, and measurement based methods for extracting the electrical parameters of through silicon vias (TSVs) publication-title: IEEE Trans. Compon. Packag. Manuf. Technol. contributor: fullname: Ndip, I. – volume: 32 start-page: 487 issue: 4 year: 2013 end-page: 496 ident: C1 article-title: Modeling and application of multi-port TVS networks in 3-D IC publication-title: IEEE Trans. Comput.-Aided Design Integr. Circuits Syst. contributor: fullname: Yao, W. – volume: pp start-page: 1 issue: 99 year: 2015 end-page: 8 ident: C3 article-title: Impact of frequency-dependent and nonlinear parameters on transient analysis of through silicon vias equivalent circuit publication-title: IEEE Trans. Electromagn. Compat. contributor: fullname: Piersanti, S. – volume: 52 start-page: 1008 issue: 4 year: 2010 end-page: 1018 ident: C5 article-title: Signal/power integrity analysis for multilayer printed circuit boards using cascaded S-parameters publication-title: IEEE Trans. Electromagn. Compat. contributor: fullname: de Paulis, F.; Zhang, Y-J.; Fan, J. – volume: 4 start-page: 504 issue: 3 year: 2014 end-page: 515 article-title: Analytical, numerical, and measurement based methods for extracting the electrical parameters of through silicon vias (TSVs) publication-title: IEEE Trans. Compon. Packag. Manuf. Technol. – volume: 52 start-page: 1008 issue: 4 year: 2010 end-page: 1018 article-title: Signal/power integrity analysis for multilayer printed circuit boards using cascaded S‐parameters publication-title: IEEE Trans. Electromagn. Compat. – volume: 32 start-page: 487 issue: 4 year: 2013 end-page: 496 article-title: Modeling and application of multi‐port TVS networks in 3‐D IC publication-title: IEEE Trans. Comput.‐Aided Design Integr. Circuits Syst. – volume: 5 start-page: 108 issue: 1 year: 2015 end-page: 118 article-title: Modeling of through‐silicon via (TSV) interposer considering depletion capacitance and substrate layer thickness effects publication-title: IEEE Trans. Compon. Packag. Manuf. Technol. – volume: pp start-page: 1 issue: 99 year: 2015 end-page: 8 article-title: Impact of frequency‐dependent and nonlinear parameters on transient analysis of through silicon vias equivalent circuit publication-title: IEEE Trans. Electromagn. Compat. – ident: e_1_2_5_5_1 doi: 10.1109/TCPMT.2013.2279688 – start-page: 1 issue: 99 year: 2015 ident: e_1_2_5_4_1 article-title: Impact of frequency‐dependent and nonlinear parameters on transient analysis of through silicon vias equivalent circuit publication-title: IEEE Trans. Electromagn. Compat. contributor: fullname: Piersanti S. – ident: e_1_2_5_6_1 doi: 10.1109/TEMC.2010.2072784 – volume: 32 start-page: 487 issue: 4 year: 2013 ident: e_1_2_5_2_1 article-title: Modeling and application of multi‐port TVS networks in 3‐D IC publication-title: IEEE Trans. Comput.‐Aided Design Integr. Circuits Syst. doi: 10.1109/TCAD.2012.2228740 contributor: fullname: Yao W. – volume: 5 start-page: 108 issue: 1 year: 2015 ident: e_1_2_5_3_1 article-title: Modeling of through‐silicon via (TSV) interposer considering depletion capacitance and substrate layer thickness effects publication-title: IEEE Trans. Compon. Packag. Manuf. Technol. doi: 10.1109/TCPMT.2014.2372771 contributor: fullname: Han K.J. |
SSID | ssib014146041 ssj0012997 |
Score | 2.2592854 |
Snippet | The high level of integration in digital electronic chips based on three-dimensional (3D) technology requires accurate modelling of the vertical interconnects... The high level of integration in digital electronic chips based on three‐dimensional (3D) technology requires accurate modelling of the vertical interconnects... |
SourceID | proquest crossref wiley iet |
SourceType | Aggregation Database Publisher Enrichment Source |
StartPage | 1025 |
SubjectTerms | 3D technology Arrays crosstalk digital electronic chip integration electromagnetic modelling equivalent circuit equivalent circuits high density array integrated circuit interconnections Interconnections Mathematical analysis Mathematical models Modelling multiport scattering parameter matrix Scattering scattering parameter analytical evaluation Semiconductor technology signal propagation Solvers S‐parameters Three dimensional three‐dimensional integrated circuits three‐dimensional technology through silicon via array TSV crosstalk vertical interconnects |
Title | Analytical evaluation of scattering parameters for equivalent circuit of through silicon via array |
URI | http://digital-library.theiet.org/content/journals/10.1049/el.2015.1265 https://onlinelibrary.wiley.com/doi/abs/10.1049%2Fel.2015.1265 https://search.proquest.com/docview/1808085221 |
Volume | 51 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8MwDI7YuMAB8RQDhoIEx0JfWZsjIKYJDcSBSbtFSZpKlUY31haJf4-ddq8DSFxbJ6qcOP4a258JuY415iJw6fhe6jqAiLUTJzFzOJM6UNalYjXyy2tvMAqfx2zcXLhhLUzND7G8cEPLsOc1GrhUdRcSALW4iBg48Nit5_dYi2wDsolxn_vh2zKKAEetba4SMBeNetwkvsP4u_XRGy6plZlyA22uY1brdPr7ZK9Bi_S-Xt4DsmXyQ7K7xiF4RJSlFbE30nRF3U2nKS205c4EKYoE3x-Y-FJQAKnUfFYZiIK_oTqb6yorUb5p2UOLbALbI6dfmaRyPpffx2TUf3p_HDhN4wRHhwAAHRZp-M_SRmJlbCTBKwNw41oqFUQ-w380JqUP5hikPc9LosTnLGEBU1qyMJImOCHtfJqbU0Jjxo3nmjhKFMeqVI5B3gBdH48VrGqH3Cx0J2Y1P4awce2QCzMRqGOBOu6QK1CsaAyk-EWmuyHzNFy9E7MkhTkWyyLACDCyIXMzrWA2ZMeMAUp6HVJvmj8_BmYe-g_IqMHds_8OOCc7-BzTxXx2QdrlvDJdACalurS77wdE2NiG |
link.rule.ids | 315,786,790,11583,27946,27947,46076,46500 |
linkProvider | Wiley-Blackwell |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8MwDI7YOAAHxFMMGAQJjoX1kbU5Ato0oJs4bNJuUZqmUqXRjW1F4t9jp93rABLnOlHlxPGX2P5MyG2gMBeBS8uxk4YFiFhZQRwwizOp3Mi4VKxG7vaanYH3OmTDss8p1sIU_BDLBze0DHNeo4Hjg3Rx4fSQJFNj5MBm97bTZBWy7QHWwN4Njve-DCPAWWu6q7isgVY9LDPfYfzD-ugNn1RJ9XwDbq6DVuN12gdkv4SL9LFY30OypbMjsrdGInhMIsMrYp6k6Yq7m44TOlOGPBOkKDJ8f2Dmy4wCSqX6M09BFBwOVelU5ekc5cuePXSWjmB_ZPQrlVROp_L7hAzarf5zxyo7J1jKAwRoMV_BRUtpiaWxvgS3DMiNKxlFru8wvKQxKR2wRzdp2nbsxw5nMXNZpCTzfKndU1LNxpk-IzRgXNsNHfhxxLEslWOU10Xfx4MIlrVG7ha6E5OCIEOYwLbHhR4J1LFAHdfIDShWlBYy-0WmviHTClffxCROYI7FsgiwAgxtyEyPc5gN6TEDwJJ2jRS75s-fgZlD5wkpNXjj_L8DrslOp98NRfjSe7sguyiDuWMOuyTV-TTXdUAp8-jK7MQf9UPb6w |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8MwDI7YkBAcEE8xYBAkOBbWR9rmyGPTgDHtwKTdojRNpUqjG9uKxL_HTrvXASTOdaLKjuPPsfOFkOtQYS8Cl5ZjJw0LELGywjhkFmdSuZEJqXgb-a3rt_vey4ANygM3vAtT8EMsDtzQM8x-jQ4-jpMi3_SQI1Nj4cBmt7bjswrZ9HzIyJHZ2estqgiw1ZrHVVzWQKcelI3vMP5udfRaSKqkeraGNlcxqwk6rT2yW6JFel-Yd59s6OyA7KxwCB6SyNCKmBNpuqTupqOETpXhzgQpigTfH9j4MqUAUqn-zFMQhXhDVTpReTpD-fLJHjpNh7A8MvqVSionE_l9RPqt5vtj2yofTrCUBwDQYoGCPEtpiTdjAwlRGYAbVzKK3MBhmKMxKR1wRzfxbTsOYoezmLksUpJ5gdTuMalmo0yfEBoyru2GDoM44ngrlWOR18XQx8MIrFojN3PdiXHBjyFMXdvjQg8F6ligjmvkChQrSgeZ_iJTX5NpdpbfBBgf5pibRYATYGVDZnqUw2zIjhkClLRrpFg0f_4MzNxxHpBRgzdO_zvgkmz1nlqi89x9PSPbKIKdYw47J9XZJNd1wCiz6MIsxB_Etdsd |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Analytical+evaluation+of+scattering+parameters+for+equivalent+circuit+of+through+silicon+via+array&rft.jtitle=Electronics+letters&rft.au=Cecchetti%2C+R&rft.au=Piersanti%2C+S&rft.au=de+Paulis%2C+F&rft.au=Orlandi%2C+A&rft.date=2015-06-25&rft.pub=The+Institution+of+Engineering+and+Technology&rft.issn=0013-5194&rft.eissn=1350-911X&rft.volume=51&rft.issue=13&rft.spage=1025&rft.epage=1027&rft_id=info:doi/10.1049%2Fel.2015.1265&rft.externalDocID=10_1049_el_2015_1265 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0013-5194&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0013-5194&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0013-5194&client=summon |