Analytical evaluation of scattering parameters for equivalent circuit of through silicon via array

The high level of integration in digital electronic chips based on three-dimensional (3D) technology requires accurate modelling of the vertical interconnects (the through silicon vias – TSVs). An accurate prediction of the signal propagation and crosstalk of the TSVs cannot be based on the single v...

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Published inElectronics letters Vol. 51; no. 13; pp. 1025 - 1027
Main Authors Cecchetti, R, Piersanti, S, de Paulis, F, Orlandi, A, Fan, J
Format Journal Article
LanguageEnglish
Published The Institution of Engineering and Technology 25.06.2015
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Abstract The high level of integration in digital electronic chips based on three-dimensional (3D) technology requires accurate modelling of the vertical interconnects (the through silicon vias – TSVs). An accurate prediction of the signal propagation and crosstalk of the TSVs cannot be based on the single via since the interaction among adjacent TSVs in a high density array cannot be neglected. An algorithm is proposed that extends the approach for modelling a TSV array with a complete analytical evaluation of the final multiport scattering parameter matrix, thus making the electromagnetic modelling of such structures more efficient without relying on commercial circuit solvers. The proposed method requires much less processing time with respect to commercial solvers with a comparable accuracy.
AbstractList The high level of integration in digital electronic chips based on three‐dimensional (3D) technology requires accurate modelling of the vertical interconnects (the through silicon vias – TSVs). An accurate prediction of the signal propagation and crosstalk of the TSVs cannot be based on the single via since the interaction among adjacent TSVs in a high density array cannot be neglected. An algorithm is proposed that extends the approach for modelling a TSV array with a complete analytical evaluation of the final multiport scattering parameter matrix, thus making the electromagnetic modelling of such structures more efficient without relying on commercial circuit solvers. The proposed method requires much less processing time with respect to commercial solvers with a comparable accuracy.
Author de Paulis, F
Orlandi, A
Cecchetti, R
Piersanti, S
Fan, J
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CitedBy_id crossref_primary_10_1109_LMWC_2017_2734761
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Cites_doi 10.1109/TCPMT.2013.2279688
10.1109/TEMC.2010.2072784
10.1109/TCAD.2012.2228740
10.1109/TCPMT.2014.2372771
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Issue 13
Keywords digital electronic chip integration
vertical interconnects
scattering parameter analytical evaluation
signal propagation
S-parameters
three-dimensional technology
equivalent circuits
multiport scattering parameter matrix
integrated circuit interconnections
electromagnetic modelling
through silicon via array
TSV crosstalk
equivalent circuit
3D technology
crosstalk
high density array
three-dimensional integrated circuits
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Piersanti, S. (C3) 2015; pp
Han, K.J. (C2) 2015; 5
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Ndip, I. (C4) 2014; 4
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Snippet The high level of integration in digital electronic chips based on three-dimensional (3D) technology requires accurate modelling of the vertical interconnects...
The high level of integration in digital electronic chips based on three‐dimensional (3D) technology requires accurate modelling of the vertical interconnects...
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SubjectTerms 3D technology
Arrays
crosstalk
digital electronic chip integration
electromagnetic modelling
equivalent circuit
equivalent circuits
high density array
integrated circuit interconnections
Interconnections
Mathematical analysis
Mathematical models
Modelling
multiport scattering parameter matrix
Scattering
scattering parameter analytical evaluation
Semiconductor technology
signal propagation
Solvers
S‐parameters
Three dimensional
three‐dimensional integrated circuits
three‐dimensional technology
through silicon via array
TSV crosstalk
vertical interconnects
Title Analytical evaluation of scattering parameters for equivalent circuit of through silicon via array
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