Analytical evaluation of scattering parameters for equivalent circuit of through silicon via array

• Published in: Electronics letters Vol. 51; no. 13; pp. 1025 - 1027
• Main Authors: Cecchetti, R, Piersanti, S, de Paulis, F, Orlandi, A, Fan, J
• Format: Journal Article
• Language: English
• Published: The Institution of Engineering and Technology 25.06.2015
• Subjects: 3D technology; Arrays; crosstalk; digital electronic chip integration; electromagnetic modelling; equivalent circuit; equivalent circuits; high density array; integrated circuit interconnections; Interconnections; Mathematical analysis; Mathematical models; Modelling; multiport scattering parameter matrix; Scattering; scattering parameter analytical evaluation; Semiconductor technology; signal propagation; Solvers; S‐parameters; Three dimensional; three‐dimensional integrated circuits; three‐dimensional technology; through silicon via array; TSV crosstalk; vertical interconnects; digital electronic chip integration; vertical interconnects; scattering parameter analytical evaluation; signal propagation; S-parameters; three-dimensional technology; equivalent circuits; multiport scattering parameter matrix; integrated circuit interconnections; electromagnetic modelling; through silicon via array; TSV crosstalk; equivalent circuit; 3D technology; crosstalk; high density array; three-dimensional integrated circuits
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2015.1265

The high level of integration in digital electronic chips based on three-dimensional (3D) technology requires accurate modelling of the vertical interconnects (the through silicon vias – TSVs). An accurate prediction of the signal propagation and crosstalk of the TSVs cannot be based on the single via since the interaction among adjacent TSVs in a high density array cannot be neglected. An algorithm is proposed that extends the approach for modelling a TSV array with a complete analytical evaluation of the final multiport scattering parameter matrix, thus making the electromagnetic modelling of such structures more efficient without relying on commercial circuit solvers. The proposed method requires much less processing time with respect to commercial solvers with a comparable accuracy.