Atomic force microscopy observation of the enamel roughness and depth profile after phosphoric acid etching
The aim was to compare the enamel surface roughness (ESR) and absolute depth profile (ADP) (mean peak-to-valley height) by atomic force microscopy (AFM) before and after using four different phosphoric acids. A total of 160 enamel samples from 40 upper premolars were prepared. The inclusion criterio...
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Published in | Journal of electron microscopy Vol. 59; no. 2; p. 119 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Japan
01.04.2010
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Subjects | |
Online Access | Get more information |
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Summary: | The aim was to compare the enamel surface roughness (ESR) and absolute depth profile (ADP) (mean peak-to-valley height) by atomic force microscopy (AFM) before and after using four different phosphoric acids. A total of 160 enamel samples from 40 upper premolars were prepared. The inclusion criterion was that the teeth have healthy enamel. Exclusion criteria included any of the following conditions: facial restorations, caries lesions, enamel hypoplasia and dental fluorosis. Evaluations of the ESR and ADP were carried out by AFM. The Mann-Whitney U-test was used to compare continuous variables and the Wilcoxon test was used to analyze the differences between before and after etching. There were statistically significant differences (P <or= 0.05) among mean surface roughness and absolute depth before and after using four different phosphoric acids in healthy enamel; Etch-37 and Scotchbond Etching Gel showed higher profiles after etching (P <or= 0.05). There were statistically significant differences (P <or= 0.05) among roughness and ADP before and after using four different phosphoric acids in healthy enamel. However, consistently Etch-37 and Scotchbond Etching Gel showed the highest increase regarding the ESR and ADP after etching healthy enamel. AFM was a useful tool to study site-specific structural topography changes in enamel after phosphoric acid etching. |
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ISSN: | 1477-9986 |
DOI: | 10.1093/jmicro/dfp042 |