A simple and accurate method for extracting substrate resistance of RF MOSFETs

In this paper, a simple and accurate method was proposed for extracting substrate resistance of an RF MOSFET, the substrate of which is represented by a single resistor. The extraction results from the measured network parameters are presented for various bias conditions. Excellent agreement between...

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Bibliographic Details
Published inIEEE electron device letters Vol. 23; no. 7; pp. 434 - 436
Main Authors Han, Jeonghu, Je, Minkyu, Shin, Hyungcheol
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bias
Capacitance
Curve fitting
Devices
Electrical resistance measurement
Equivalent circuits
Extraction
Immune system
Mathematical models
MOSFETs
Networks
Predictive models
Radio frequencies
Radio frequency
Resistors
Threshold voltage
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Summary:In this paper, a simple and accurate method was proposed for extracting substrate resistance of an RF MOSFET, the substrate of which is represented by a single resistor. The extraction results from the measured network parameters are presented for various bias conditions. Excellent agreement between the results of measurements and the model for the extracted substrate resistance was obtained up to 18 GHz. Also, the resistance extracted using the proposed method was shown to give scalable results.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.1015234