Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices

• Published in: Beilstein journal of nanotechnology Vol. 10; no. 1; pp. 349 - 355
• Main Authors: de Araujo, Eduardo Nery Duarte, de Sousa, Thiago Alonso Stephan Lacerda, de Moura Guimarães, Luciano, Plentz, Flavio
• Format: Journal Article
• Language: English
• Published: Germany Beilstein-Institut zur Föerderung der Chemischen Wissenschaften 2019; Beilstein-Institut
• Subjects: Carrier mobility; Chemical contaminants; Chemical vapor deposition; Cleaning; CVD graphene; Defects; Devices; Domains; Electrical properties; Full Research Paper; Graphene; Lasers; mobility; Nanoscience; Nanotechnology; Photolithography; Production methods; Raman spectroscopy; Spectrum analysis; well-ordered domain; mobility; well-ordered domain; defects; CVD graphene
• ISSN: 2190-4286; 2190-4286
• DOI: 10.3762/bjnano.10.34

The large-scale production of high-quality and clean graphene devices, aiming at technological applications, has been a great challenge over the last decade. This is due to the high affinity of graphene with polymers that are usually applied in standard lithography processes and that, inevitably, modify the electrical proprieties of graphene. By Raman spectroscopy and electrical-transport investigations, we correlate the room-temperature carrier mobility of graphene devices with the size of well-ordered domains in graphene. In addition, we show that the size of these well-ordered domains is highly influenced by post-photolithography cleaning processes. Finally, we show that by using poly(dimethylglutarimide) (PMGI) as a protection layer, the production yield of CVD graphene devices is enhanced. Conversely, their electrical properties are deteriorated as compared with devices fabricated by conventional production methods.