Ab-Initio Study of the Electronic and Magnetic Properties of Boron- and Nitrogen-Doped Penta-Graphene

• Published in: Nanomaterials (Basel, Switzerland) Vol. 10; no. 4; p. 816
• Main Authors: Zhang, Chao, Cao, Yu, Dai, Xing, Ding, Xian-Yong, Chen, Leilei, Li, Bing-Sheng, Wang, Dong-Qi
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 24.04.2020; MDPI
• Subjects: Boron; Carbon; Charge density; Charge transfer; Dopants; Electronegativity; Electronic structure; Energy; First principles; first-principles calculations; Graphene; Magnetic devices; Magnetic moments; Magnetic properties; Nanomaterials; Nitrogen; Optoelectronic devices; penta-graphene; Polarization; Polarization (spin alignment); Theory; first-principles calculations; magnetic properties; penta-graphene; electronic structure
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano10040816

First-principles calculations were performed to investigate the effects of boron/nitrogen dopant on the geometry, electronic structure and magnetic properties of the penta-graphene system. It was found that the electronic band gap of penta-graphene could be tuned and varied between 1.88 and 2.12 eV depending on the type and location of the substitution. Moreover, the introduction of dopant could cause spin polarization and lead to the emergence of local magnetic moments. The main origin of the magnetic moment was analyzed and discussed by the examination of the spin-polarized charge density. Furthermore, the direction of charge transfer between the dopant and host atoms could be attributed to the competition between the charge polarization and the atomic electronegativity. Two charge-transfer mechanisms worked together to determine which atoms obtained electrons. These results provide the possibility of modifying penta-graphene by doping, making it suitable for future applications in the field of optoelectronic and magnetic devices.