Accurate modeling of large angle tilt and pure vertical implantations: application to the simulation of n- and p-LDMOS backgates

• Published in: IEEE transactions on electron devices Vol. 50; no. 5; pp. 1401 - 1404
• Main Authors: Lampin, E., Dubois, E., Hui Xu, Bardy, S., Murray, F.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.05.2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE); Institute of Electrical and Electronics Engineers
• Subjects: Camber; Channeling; Computer simulation; Devices; Electronics; Engineering Sciences; Implantation; Ion implantation; Metal oxide semiconductors; Power MOSFETs; Semiconductor device modeling; Tilt; Two dimensional
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2003.813464

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0/spl deg/) implantation are studied with the atomistic simulator Crystal-TRIM. The three-dimensional (3-D) nature of the large-angle tilt implantation is transposed to two dimensions through the introduction of a pseudo-tilt angle. Both the concept of pseudo-tilt angle and the channeling effects have been integrated in the two-dimensional (2-D) process and device simulator IMPACT. These model improvements give a quantitative agreement of doping profiles and sheet resistances with experiments, and therefore provide a reliable basis for the development of n- and p-LDMOS technologies.