Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

• Published in: IEEE microwave and wireless components letters Vol. 14; no. 5; pp. 204 - 206
• Main Authors: Ohsato, K., Yoshimasu, T.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2004; Institute of Electrical and Electronics Engineers
• Subjects: Amplification; Amplifiers; Applied sciences; Circuit properties; CMOS; CMOS technology; Design. Technologies. Operation analysis. Testing; Electric potential; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Energy consumption; Exact sciences and technology; Gain; Integrated circuits; L-band; Low voltage; Microwave amplifiers; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Microwaves; MMICs; Noise levels; Operational amplifiers; Personal communication; Power amplifiers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor optical amplifiers; Silicon on insulator technology; Performance evaluation; Mobile radiocommunication; Noise figure; L-band personal communications; L band; SOI; Silicon on insulator technology; CMOS; MMIC amplifier; Complementary MOS technology; Microwave amplifier; Low-power electronics; MMIC; Gain
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2004.827911

An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.