Atomic-Scale Friction on Monovacancy-Defective Graphene and Single-Layer Molybdenum-Disulfide by Numerical Analysis
Using numerical simulations, we study the atomic-scale frictional behaviors of monovacancy-defective graphene and single-layer molybdenum-disulfide (SLMoS ) based on the classical Prandtl-Tomlinson (PT) model with a modified interaction potential considering the Schwoebel-Ehrlich barrier. Due to the...
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Published in | Nanomaterials (Basel, Switzerland) Vol. 10; no. 1; p. 87 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Switzerland
MDPI AG
02.01.2020
MDPI |
Subjects | |
Online Access | Get full text |
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Summary: | Using numerical simulations, we study the atomic-scale frictional behaviors of monovacancy-defective graphene and single-layer molybdenum-disulfide (SLMoS
) based on the classical Prandtl-Tomlinson (PT) model with a modified interaction potential considering the Schwoebel-Ehrlich barrier. Due to the presence of a monovacancy defect on the surface, the frictional forces were significantly enhanced. The effects of the PT model parameters on the frictional properties of monovacancy-defective graphene and SLMoS
were analyzed, and it showed that the spring constant of the pulling spring
is the most influential parameter on the stick-slip motion in the vicinity of the vacancy defect. Besides, monovacancy-defective SLMoS
is found to be more sensitive to the stick-slip motion at the vacancy defect site than monovacancy-defective graphene, which can be attributed to the complicated three-layer-sandwiched atomic structure of SLMoS
. The result suggests that the soft tip with a small spring constant can be an ideal candidate for the observation of stick-slip behaviors of the monovacancy-defective surface. This study can fill the gap in atomic-scale friction experiments and molecular dynamics simulations of 2D materials with vacancy-related defects. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 These authors contributed equally to this work. |
ISSN: | 2079-4991 2079-4991 |
DOI: | 10.3390/nano10010087 |