Organic Semiconductors: Impact of Disorder at Different Timescales

The charge transport in organic materials, from molecular crystals to polymers, is determined by their degree of disorder. The dynamic disorder in ideal molecular crystals at room temperature and the static disorder in disordered polymers are just two limiting cases of the timescale of the fluctuati...

Full description

Saved in:
Bibliographic Details
Published inChemphyschem Vol. 11; no. 10; pp. 2067 - 2074
Main Authors McMahon, David P., Troisi, Alessandro
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 12.07.2010
WILEY‐VCH Verlag
Wiley
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The charge transport in organic materials, from molecular crystals to polymers, is determined by their degree of disorder. The dynamic disorder in ideal molecular crystals at room temperature and the static disorder in disordered polymers are just two limiting cases of the timescale of the fluctuations in the electronic Hamiltonian caused by nuclear motions. In fact, a very large number of important materials (e.g. liquid crystalline semiconductors) are actually in an intermediate regime where the disorder is neither purely static nor purely dynamic. This Minireview discusses the recent contribution of computational chemistry (molecular dynamics and quantum chemistry) to the characterization of these transport regimes and outlines the theoretical methods that can be used to relate the system characteristics to the measurable mobility. Disorder in organic semiconductors evolves over different timescales depending on the material. The dynamic disorder in ideal molecular crystals at room temperature and the static disorder in disordered polymers are two limiting cases of the timescale of the fluctuations caused by nuclear motions (see figure). Liquid crystalline semiconductors fall within an intermediate regime where the disorder is neither purely static nor purely dynamic.
Bibliography:ArticleID:CPHC201000182
ark:/67375/WNG-NDWSTKNS-L
istex:F3D422D22FC7EB18760686FE072CE5557B5521A3
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1439-4235
1439-7641
DOI:10.1002/cphc.201000182