Novel activation process for Mg-implanted GaN

A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ultraviolet luminescence and weaker yellow luminescence in the photoluminescenc...

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Bibliographic Details
Published inJournal of crystal growth Vol. 388; pp. 112 - 115
Main Authors Hashimoto, Shin, Nakamura, Takao, Honda, Yoshio, Amano, Hiroshi
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.02.2014
Subjects
A1. Doping
A1. Recrystallization
A3. Migration enhanced epitaxy
Activation
Annealing
B1. Nitrides
B2. Semiconducting gallium compounds
Crystal growth
Crystals
Gallium nitrides
Luminescence
Magnesium
Optical data processing
A1. Doping
B1. Nitrides
A3. Migration enhanced epitaxy
B2. Semiconducting gallium compounds
A1. Recrystallization
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Summary:A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ultraviolet luminescence and weaker yellow luminescence in the photoluminescence spectroscopy. After this process, small hexagonal hillocks were observed on the surface, which indicated that crystal regrowth was induced by this process, consisting of decomposition of GaN by H2 supplies and re-crystallization by NH3 supplies. It was revealed that the implanted Mg could easily be located at the activation site by means of crystal regrowth by this process. •Activation process for Mg-implanted GaN.•An H2/N2 alternating supply annealing.•Photoluminescence of Mg-implanted GaN.
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2013.07.011