Synthesis of superhydrophobic silicon oxide nanowires surface on silicon wafer
High roughness of several hundreds of nanometers and low free energy introduced the superhydrophobic surface with a high water contact angle of approximatelt 160 degrees for the chemically modified silicon oxide nanowires on silicon wafer. Particularly, a very small rolling angle of < 5 degrees w...
Saved in:
Published in | Journal of nanoscience and nanotechnology Vol. 9; no. 3; p. 1819 |
---|---|
Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
United States
01.03.2009
|
Online Access | Get more information |
Cover
Loading…
Summary: | High roughness of several hundreds of nanometers and low free energy introduced the superhydrophobic surface with a high water contact angle of approximatelt 160 degrees for the chemically modified silicon oxide nanowires on silicon wafer. Particularly, a very small rolling angle of < 5 degrees with the annealed sample was observed. The nano-structure with high roughness and organic perfluoroalkysilane coating with CF2/CF3 groups contributed the superhydrophobicity. The present superhydrophobic nanowires surface on silicon wafer suggests the potential applications in self-cleaning semiconductor devices such as radar surface, solar cell. |
---|---|
ISSN: | 1533-4880 |
DOI: | 10.1166/jnn.2009.371 |