Facile Synthesis of Wide-Bandgap Fluorinated Graphene Semiconductors

The bandgap opening of graphene is extremely important for the expansion of the applications of graphene‐based materials into optoelectronics and photonics. Current methods to open the bandgap of graphene have intrinsic drawbacks including small bandgap openings, the use hazardous/harsh chemical oxi...

Full description

Saved in:
Bibliographic Details
Published inChemistry : a European journal Vol. 17; no. 32; pp. 8896 - 8903
Main Authors Chang, Haixin, Cheng, Jinsheng, Liu, Xuqing, Gao, Junfeng, Li, Mingjian, Li, Jinghong, Tao, Xiaoming, Ding, Feng, Zheng, Zijian
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 01.08.2011
WILEY‐VCH Verlag
Wiley Subscription Services, Inc
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The bandgap opening of graphene is extremely important for the expansion of the applications of graphene‐based materials into optoelectronics and photonics. Current methods to open the bandgap of graphene have intrinsic drawbacks including small bandgap openings, the use hazardous/harsh chemical oxidations, and the requirement of expensive chemical‐vapor deposition technologies. Herein, an eco‐friendly, highly effective, low‐cost, and highly scalable synthetic approach is reported for synthesizing wide‐bandgap fluorinated graphene (F‐graphene or or fluorographene) semiconductors under ambient conditions. In this synthesis, ionic liquids are used as the only chemical to exfoliate commercially available fluorinated graphite into single and few‐layer F‐graphene. Experimental and theoretical results show that the bandgap of F‐graphene is largely dependent on the F coverage and configuration, and thereby can be tuned over a very wide range. Fluorinated graphenes: An eco‐friendly, highly effective, low‐cost, and highly scalable approach has been developed to synthesize wide‐bandgap fluorinated graphene (F‐graphene; see figure) semiconductors. Experimental and theoretical results show the F‐graphene bandgaps are largely dependent on the F coverage and configurations, and can be tuned over a very wide range.
Bibliography:The Hong Kong Polytechnic University - No. A-PJ49; No. A-PK92
National Basic Research Program of China - No. 2011CB935704
istex:C54ECA5B407EB8DA2E3860FA18729B27062BBDD2
ark:/67375/WNG-HDSR202J-F
ArticleID:CHEM201100699
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
content type line 23
ISSN:0947-6539
1521-3765
1521-3765
DOI:10.1002/chem.201100699