High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides

The carrier mobility mu of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0.8)O3 (PZT). In the electron-only regime of the FLG, mu reaches 7x10(4) cm(2)/V s at 300 K for n=2.4x10(12)/cm(2), 70% of the intr...

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Published inPhysical review letters Vol. 102; no. 13; p. 136808
Main Authors Hong, X, Posadas, A, Zou, K, Ahn, C H, Zhu, J
Format Journal Article
LanguageEnglish
Published United States 03.04.2009
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Summary:The carrier mobility mu of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0.8)O3 (PZT). In the electron-only regime of the FLG, mu reaches 7x10(4) cm(2)/V s at 300 K for n=2.4x10(12)/cm(2), 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10(5) cm(2)/V s at low temperature. The temperature-dependent resistivity rho(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D=7.8+/-0.5 eV.
ISSN:0031-9007
DOI:10.1103/physrevlett.102.136808