Direct Observation of a Li‐Ionic Space‐Charge Layer Formed at an Electrode/Solid‐Electrolyte Interface

When two different materials come into contact, mobile carriers redistribute at the interface according to their potential difference. Such a charge redistribution is also expected at the interface between electrodes and solid electrolytes. The redistributed ions significantly affect the ion conduct...

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Published inAngewandte Chemie International Edition Vol. 58; no. 16; pp. 5292 - 5296
Main Authors Nomura, Yuki, Yamamoto, Kazuo, Hirayama, Tsukasa, Ouchi, Satoru, Igaki, Emiko, Saitoh, Koh
Format Journal Article
LanguageEnglish
Published Germany Wiley Subscription Services, Inc 08.04.2019
EditionInternational ed. in English
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Summary:When two different materials come into contact, mobile carriers redistribute at the interface according to their potential difference. Such a charge redistribution is also expected at the interface between electrodes and solid electrolytes. The redistributed ions significantly affect the ion conduction through the interface. Thus, it is essential to determine the actual distribution of the ionic carriers and their potential to improve ion conduction. We succeeded in visualizing the ionic and potential profiles in the charge redistribution layer, or space‐charge layer (SCL), formed at the interface between a Cu electrode and Li‐conductive solid electrolyte using phase‐shifting electron holography and spatially resolved electron energy‐loss spectroscopy. These electron microscopy techniques clearly showed the Li‐ionic SCL, which dropped by 1.3 V within a distance of 10 nm from the interface. These techniques could contribute to the development of next‐generation electrochemical devices. Interest in the interface: Electron holography and spatially resolved electron energy‐loss spectroscopy were used to directly visualize electric potential and Li‐ion profiles in a Li‐ionic space‐charge layer (SCL) at the interface between an electrode and a solid electrolyte. The potential of the SCL dropped by 1.3 V within 10 nm from the interface.
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201814669