Investigation of the Absorption Spectrum of InAs Doping Superlattice Solar Cells

• Published in: Nanomaterials (Basel, Switzerland) Vol. 14; no. 8; p. 682
• Main Authors: Peng, Ruiqin, Su, Wenkang, Yu, Zhiguo, Cao, Jiamu, Jiang, Dongwei, Wang, Dongbo, Jiao, Shujie
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 16.04.2024; MDPI
• Subjects: Absorption; Absorption spectra; Alternative energy sources; Analysis; Arsenic compounds; Clean energy; Communication; Doping; Efficiency; Electric properties; Electrical measurement; Harsh environments; InAs; Indium; Mechanical properties; mechanism; Molecular beam epitaxy; nipi superlattice; Optical properties; Photoluminescence; Photons; Photovoltaic cells; Quantum efficiency; Radiation; Short circuit currents; Short-circuit current; Solar batteries; Solar cells; Solar energy; subband absorption; Superlattices; Temperature; Temperature dependence; China; mechanism; InAs; nipi superlattice; subband absorption
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano14080682

InAs doping superlattice-based solar cells have great advantages in terms of the ability to generate clean energy in space or harsh environments. In this paper, multi-period InAs doping superlattice solar cells have been prepared.. Current density–voltage measurements were taken both in the dark and light, and the short-circuit current was estimated to be 19.06 mA/cm2. Efficiency improvements were achieved with a maximum one sun AM 1.5 G efficiency of 4.14%. Additionally, external quantum efficiency and photoluminescence with different temperature-dependent test results were taken experimentally. The corresponding absorption mechanisms were also investigated.