Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts

Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw‐tooth‐like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified di...

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Published inAdvanced materials (Weinheim) Vol. 24; no. 10; pp. 1328 - 1332
Main Authors Li, Luying, Jin, Lei, Wang, Jianbo, Smith, David J., Yin, Wan-Jian, Yan, Yanfa, Sang, Hongqian, Choy, Wallace C. H., McCartney, Martha R.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 08.03.2012
WILEY‐VCH Verlag
Subjects
electron holography
Electrons
Models, Molecular
Molecular Conformation
nanocrystals
Nanostructures - chemistry
Selenium Compounds - chemistry
semiconductors
structure-property relationships
Sulfides - chemistry
Zinc - chemistry
Zinc Compounds - chemistry
ZnSe
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Summary:Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw‐tooth‐like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization‐induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.
Bibliography:ArticleID:ADMA201103920
istex:2759840889A626E84349E9C23B274F7B91DDAB0E
ark:/67375/WNG-LGK305K9-N
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201103920