High-rate microcrystalline silicon deposition for p–i–n junction solar cells

• Published in: Solar energy materials and solar cells Vol. 90; no. 18; pp. 3199 - 3204
• Main Authors: Matsui, Takuya, Matsuda, Akihisa, Kondo, Michio
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 23.11.2006; Elsevier
• Subjects: Applied sciences; Energy; Exact sciences and technology; High-rate deposition; Hydrogenated microcrystalline silicon; Natural energy; PECVD; Photovoltaic conversion; Solar cell; Solar cells. Photoelectrochemical cells; Solar energy; Solar cell; Hydrogenated microcrystalline silicon; PECVD; High-rate deposition; Silicon solar cells; Microcrystalline material; Plasma; Short circuit currents; Glow discharge; Deposition rate; p i n junctions; Quantum yield; High pressure; Grain boundary; Si junctions; Oxidation; Performance; Silane

We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (μc-Si:H) p–i–n junction solar cells. Under high-rate conditions (2–3 nm/s), we find that the deposition pressure becomes the dominant parameter in de...