High-rate microcrystalline silicon deposition for p–i–n junction solar cells

We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (μc-Si:H) p–i–n junction solar cells. Under high-rate conditions (2–3 nm/s), we find that the deposition pressure becomes the dominant parameter in de...

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Bibliographic Details
Published inSolar energy materials and solar cells Vol. 90; no. 18; pp. 3199 - 3204
Main Authors Matsui, Takuya, Matsuda, Akihisa, Kondo, Michio
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 23.11.2006
Elsevier
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