High-rate microcrystalline silicon deposition for p–i–n junction solar cells

• Published in: Solar energy materials and solar cells Vol. 90; no. 18; pp. 3199 - 3204
• Main Authors: Matsui, Takuya, Matsuda, Akihisa, Kondo, Michio
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 23.11.2006; Elsevier
• Subjects: Applied sciences; Energy; Exact sciences and technology; High-rate deposition; Hydrogenated microcrystalline silicon; Natural energy; PECVD; Photovoltaic conversion; Solar cell; Solar cells. Photoelectrochemical cells; Solar energy; Solar cell; Hydrogenated microcrystalline silicon; PECVD; High-rate deposition; Silicon solar cells; Microcrystalline material; Plasma; Short circuit currents; Glow discharge; Deposition rate; p i n junctions; Quantum yield; High pressure; Grain boundary; Si junctions; Oxidation; Performance; Silane
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2006.06.019

We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (μc-Si:H) p–i–n junction solar cells. Under high-rate conditions (2–3 nm/s), we find that the deposition pressure becomes the dominant parameter in determining solar-cell performance. With increasing deposition pressure from 4 to 7–9 Torr, short-circuit current increases by ∼50% due to a remarkable improvement in quantum efficiencies at the visible and near infrared. As a result, the maximum efficiency of 9.13% has been achieved at an i-layer deposition rate of 2.3 nm/s. We attribute the improved performance of high-pressure-grown μc-Si:H solar cells to the structural evolution toward denser grain arrangement that prevents post-oxidation of grain boundaries.