High-rate microcrystalline silicon deposition for p–i–n junction solar cells

We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (μc-Si:H) p–i–n junction solar cells. Under high-rate conditions (2–3 nm/s), we find that the deposition pressure becomes the dominant parameter in de...

Full description

Saved in:
Bibliographic Details
Published inSolar energy materials and solar cells Vol. 90; no. 18; pp. 3199 - 3204
Main Authors Matsui, Takuya, Matsuda, Akihisa, Kondo, Michio
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 23.11.2006
Elsevier
Subjects
Online AccessGet full text

Cover

Loading…
Abstract We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (μc-Si:H) p–i–n junction solar cells. Under high-rate conditions (2–3 nm/s), we find that the deposition pressure becomes the dominant parameter in determining solar-cell performance. With increasing deposition pressure from 4 to 7–9 Torr, short-circuit current increases by ∼50% due to a remarkable improvement in quantum efficiencies at the visible and near infrared. As a result, the maximum efficiency of 9.13% has been achieved at an i-layer deposition rate of 2.3 nm/s. We attribute the improved performance of high-pressure-grown μc-Si:H solar cells to the structural evolution toward denser grain arrangement that prevents post-oxidation of grain boundaries.
AbstractList We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (μc-Si:H) p–i–n junction solar cells. Under high-rate conditions (2–3 nm/s), we find that the deposition pressure becomes the dominant parameter in determining solar-cell performance. With increasing deposition pressure from 4 to 7–9 Torr, short-circuit current increases by ∼50% due to a remarkable improvement in quantum efficiencies at the visible and near infrared. As a result, the maximum efficiency of 9.13% has been achieved at an i-layer deposition rate of 2.3 nm/s. We attribute the improved performance of high-pressure-grown μc-Si:H solar cells to the structural evolution toward denser grain arrangement that prevents post-oxidation of grain boundaries.
We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (pc-Si:H) p-i-n junction solar cells. Under high-rate conditions (2-3 nm/s), we find that the deposition pressure becomes the dominant parameter in determining solar-cell performance. With increasing deposition pressure from 4 to 7-9 Torr, short-circuit current increases by -.50% due to a remarkable improvement in quantum efficiencies at the visible and near infrared. As a result, the maximum efficiency of 9.13% has been achieved at an i-layer deposition rate of 2.3 nm/s. We attribute the improved performance of high-pressure-grown gc-Si:H solar cells to the structural evolution toward denser grain arrangement that prevents post-oxidation of grain boundaries.
Author Kondo, Michio
Matsui, Takuya
Matsuda, Akihisa
Author_xml – sequence: 1
  givenname: Takuya
  surname: Matsui
  fullname: Matsui, Takuya
  email: t-matsui@aist.go.jp
– sequence: 2
  givenname: Akihisa
  surname: Matsuda
  fullname: Matsuda, Akihisa
– sequence: 3
  givenname: Michio
  surname: Kondo
  fullname: Kondo, Michio
BackLink http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18159748$$DView record in Pascal Francis
BookMark eNp9UMFKxDAQDbKCu6t_4KEXvXVN0mybXARZ1BUW9KDnkGYnmtImNekKe_Mf_EO_xNYueBNmmGF4897Mm6GJ8w4QOid4QTDJr6pF9HWjugXFOF8MQcQRmhJeiDTLBJ-gKRa0SDFl_ATNYqwwxjTP2BQ9re3rWxpUB0ljdfA67GOn6to6SKKtrfYu2ULro-1s3xofkvb788v26ZJq5_TvuJdXIdFQ1_EUHRtVRzg71Dl6ubt9Xq3TzeP9w-pmk2pWsC41OTVY53yJBc4ACC2XYFRhKGNCCcbLJRdEZIwTUWQUc1NqVRYlz7VRBjOTzdHlyNsG_76D2MnGxuEC5cDvoqSC5oXIRA9kI7D_LsYARrbBNirsJcFysE9WcrRPDvbJIciwdnHgV1Gr2gTltI1_u5wsRcF4j7secdA_-2EhyKgtOA1bG0B3cuvt_0I_huWMbQ
CitedBy_id crossref_primary_10_1002_pip_990
crossref_primary_10_3390_ma6010291
crossref_primary_10_1143_APEX_3_051102
crossref_primary_10_5757_ASCT_2015_24_5_142
crossref_primary_10_1016_j_tsf_2007_08_087
crossref_primary_10_1016_j_jnoncrysol_2010_11_001
crossref_primary_10_1016_j_vacuum_2017_10_020
crossref_primary_10_1016_j_jnoncrysol_2013_11_040
crossref_primary_10_1016_j_vacuum_2015_03_019
crossref_primary_10_1016_j_jnoncrysol_2011_10_005
crossref_primary_10_1016_j_mattod_2015_03_002
crossref_primary_10_1016_j_tsf_2014_04_001
crossref_primary_10_1016_j_jnoncrysol_2007_09_009
crossref_primary_10_1016_j_jnoncrysol_2011_12_096
crossref_primary_10_1016_j_jnoncrysol_2010_07_019
crossref_primary_10_1016_j_apsusc_2009_06_074
crossref_primary_10_1016_j_jcrysgro_2007_02_041
crossref_primary_10_1063_1_4817859
crossref_primary_10_1143_JJAP_47_7032
crossref_primary_10_1063_1_3638712
crossref_primary_10_1063_1_4904088
crossref_primary_10_1016_j_phpro_2012_03_554
crossref_primary_10_1016_j_cap_2011_05_030
crossref_primary_10_1080_14786430902738772
crossref_primary_10_1016_j_cap_2011_05_024
crossref_primary_10_1016_j_apsusc_2010_08_068
crossref_primary_10_1109_TNANO_2023_3262367
crossref_primary_10_1139_cjp_2013_0559
crossref_primary_10_1139_cjp_2013_0636
crossref_primary_10_1557_opl_2011_929
crossref_primary_10_1016_j_tsf_2011_01_296
crossref_primary_10_1016_j_tsf_2007_06_216
crossref_primary_10_1016_j_solmat_2015_07_014
crossref_primary_10_1016_j_solmat_2009_10_021
crossref_primary_10_1063_1_2837536
crossref_primary_10_1109_JPHOTOV_2012_2214766
crossref_primary_10_1007_s12633_018_0008_9
crossref_primary_10_1063_1_2961334
crossref_primary_10_1002_pssa_201431708
crossref_primary_10_1143_JJAP_49_106102
crossref_primary_10_1016_j_apsusc_2011_03_136
crossref_primary_10_1016_j_vacuum_2011_04_031
crossref_primary_10_1557_opl_2011_1249
crossref_primary_10_1016_j_solmat_2013_05_056
crossref_primary_10_1557_opl_2011_1247
crossref_primary_10_1142_S179329201750134X
crossref_primary_10_14723_tmrsj_41_385
crossref_primary_10_1088_1674_1056_19_8_087206
crossref_primary_10_1016_j_solmat_2013_02_032
crossref_primary_10_7567_APEX_11_022301
Cites_doi 10.1016/0022-3093(83)90284-3
10.1016/S0022-3093(99)00744-9
10.1143/JJAP.42.L901
10.1007/s003390050987
10.1063/1.117440
10.1016/S0022-3093(99)00907-2
10.1016/S0927-0248(99)00140-3
10.1143/JJAP.41.5912
ContentType Journal Article
Conference Proceeding
Copyright 2006 Elsevier B.V.
2006 INIST-CNRS
Copyright_xml – notice: 2006 Elsevier B.V.
– notice: 2006 INIST-CNRS
DBID IQODW
AAYXX
CITATION
7SP
7TB
7U5
8FD
FR3
L7M
DOI 10.1016/j.solmat.2006.06.019
DatabaseName Pascal-Francis
CrossRef
Electronics & Communications Abstracts
Mechanical & Transportation Engineering Abstracts
Solid State and Superconductivity Abstracts
Technology Research Database
Engineering Research Database
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Solid State and Superconductivity Abstracts
Engineering Research Database
Technology Research Database
Mechanical & Transportation Engineering Abstracts
Advanced Technologies Database with Aerospace
Electronics & Communications Abstracts
DatabaseTitleList
Solid State and Superconductivity Abstracts
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Applied Sciences
EISSN 1879-3398
EndPage 3204
ExternalDocumentID 10_1016_j_solmat_2006_06_019
18159748
S0927024806002388
GroupedDBID --K
--M
.~1
0R~
123
1B1
1~.
1~5
4.4
457
4G.
5VS
6OB
7-5
71M
8P~
9JN
AABNK
AABXZ
AACTN
AAEDT
AAEDW
AAEPC
AAHCO
AAIAV
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAQXK
AARJD
AARLI
AAXUO
ABFNM
ABMAC
ABNUV
ABXDB
ABXRA
ABYKQ
ACDAQ
ACGFS
ACIWK
ACNNM
ACRLP
ADBBV
ADECG
ADEWK
ADEZE
ADMUD
AEBSH
AEKER
AENEX
AEZYN
AFKWA
AFRAH
AFRZQ
AFTJW
AFZHZ
AGHFR
AGUBO
AGYEJ
AHHHB
AHIDL
AHPOS
AIEXJ
AIKHN
AITUG
AJBFU
AJOXV
AJSZI
AKURH
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
ASPBG
AVWKF
AXJTR
AZFZN
BELTK
BKOJK
BLXMC
CS3
DU5
EBS
EFJIC
EFLBG
EJD
ENUVR
EO8
EO9
EP2
EP3
FDB
FEDTE
FGOYB
FIRID
FLBIZ
FNPLU
FYGXN
G-2
G-Q
GBLVA
HVGLF
HZ~
IHE
J1W
JARJE
KOM
LY6
LY7
M24
M41
MAGPM
MO0
N9A
O-L
O9-
OAUVE
OZT
P-8
P-9
PC.
Q38
R2-
RIG
RNS
ROL
RPZ
SAC
SCB
SDF
SDG
SDP
SES
SET
SEW
SMS
SPC
SPCBC
SPD
SSG
SSK
SSM
SSR
SSZ
T5K
TWZ
WH7
WUQ
XPP
ZMT
~02
~G-
08R
AAPBV
ABPIF
ABPTK
IQODW
AAXKI
AAYXX
AFJKZ
AKRWK
CITATION
7SP
7TB
7U5
8FD
FR3
L7M
ID FETCH-LOGICAL-c474t-f62f0c6850903ee12b5efa7f2449a948b589193481973208fbcab7b86cfaf04f3
IEDL.DBID .~1
ISSN 0927-0248
IngestDate Thu Oct 24 22:48:30 EDT 2024
Thu Sep 26 16:05:17 EDT 2024
Sun Oct 22 16:07:28 EDT 2023
Fri Feb 23 02:35:07 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 18
Keywords Solar cell
Hydrogenated microcrystalline silicon
PECVD
High-rate deposition
Silicon solar cells
Microcrystalline material
Plasma
Short circuit currents
Glow discharge
Deposition rate
p i n junctions
Quantum yield
High pressure
Grain boundary
Si junctions
Oxidation
Performance
Silane
Language English
License CC BY 4.0
LinkModel DirectLink
MeetingName 14th International Photovoltaic Science and Engineering Conference, Bangkok, 27 January-1 February 2004
MergedId FETCHMERGED-LOGICAL-c474t-f62f0c6850903ee12b5efa7f2449a948b589193481973208fbcab7b86cfaf04f3
Notes SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
PQID 29267939
PQPubID 23500
PageCount 6
ParticipantIDs proquest_miscellaneous_29267939
crossref_primary_10_1016_j_solmat_2006_06_019
pascalfrancis_primary_18159748
elsevier_sciencedirect_doi_10_1016_j_solmat_2006_06_019
PublicationCentury 2000
PublicationDate 2006-11-23
PublicationDateYYYYMMDD 2006-11-23
PublicationDate_xml – month: 11
  year: 2006
  text: 2006-11-23
  day: 23
PublicationDecade 2000
PublicationPlace Amsterdam
PublicationPlace_xml – name: Amsterdam
PublicationTitle Solar energy materials and solar cells
PublicationYear 2006
Publisher Elsevier B.V
Elsevier
Publisher_xml – name: Elsevier B.V
– name: Elsevier
References Keppner, Meier, Torres, Fischer, Shah (bib3) 1999; 69
Vetterl, Finger, Carius, Hapke, Houben, Kluth, Lambertz, Muck, Rech, Wagner (bib4) 2000; 62
Matsui, Kondo, Matsuda (bib8) 2003; 42
Nasuno, Kondo, Matsuda (bib5) 2002; 41
Yamamoto, Yoshimi, Tawada, Okamoto, Nakajima (bib1) 2000; 266–269
Torres, Meier, Flückiger, Kroll, Anna Selvan, Keppner, Shah, Littlewood, Kelly, Giannoulès (bib10) 1996; 69
Kondo, Fukawa, Guo, Matsuda (bib6) 2000; 266–269
Matsuda (bib7) 1983; 59–60
K. Saito, M. Sano, A. Sakai, R. Hayashi, K. Ogawa, in: Technical Digest of the 12th International PVSEC, 2001, p. 429.
T. Matsui, M. Kondo, A. Matsuda, in: Proceedings of the third WCPEC, 2003, p. 1548.
Vetterl (10.1016/j.solmat.2006.06.019_bib4) 2000; 62
Matsui (10.1016/j.solmat.2006.06.019_bib8) 2003; 42
Yamamoto (10.1016/j.solmat.2006.06.019_bib1) 2000; 266–269
Nasuno (10.1016/j.solmat.2006.06.019_bib5) 2002; 41
10.1016/j.solmat.2006.06.019_bib9
Torres (10.1016/j.solmat.2006.06.019_bib10) 1996; 69
10.1016/j.solmat.2006.06.019_bib2
Keppner (10.1016/j.solmat.2006.06.019_bib3) 1999; 69
Kondo (10.1016/j.solmat.2006.06.019_bib6) 2000; 266–269
Matsuda (10.1016/j.solmat.2006.06.019_bib7) 1983; 59–60
References_xml – volume: 266–269
  start-page: 1082
  year: 2000
  ident: bib1
  publication-title: J. Non-Cryst. Solids
  contributor:
    fullname: Nakajima
– volume: 59–60
  start-page: 767
  year: 1983
  ident: bib7
  publication-title: J. Non-Cryst. Solids
  contributor:
    fullname: Matsuda
– volume: 42
  start-page: L901
  year: 2003
  ident: bib8
  publication-title: Jpn. J. Appl. Phys.
  contributor:
    fullname: Matsuda
– volume: 69
  start-page: 169
  year: 1999
  ident: bib3
  publication-title: Appl. Phys. A
  contributor:
    fullname: Shah
– volume: 41
  start-page: 5912
  year: 2002
  ident: bib5
  publication-title: Jpn. J. Appl. Phys.
  contributor:
    fullname: Matsuda
– volume: 69
  start-page: 1373
  year: 1996
  ident: bib10
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Giannoulès
– volume: 266–269
  start-page: 84
  year: 2000
  ident: bib6
  publication-title: J. Non-Cryst. Solids
  contributor:
    fullname: Matsuda
– volume: 62
  start-page: 97
  year: 2000
  ident: bib4
  publication-title: Sol. Energy Mater. Sol. Cells
  contributor:
    fullname: Wagner
– volume: 59–60
  start-page: 767
  year: 1983
  ident: 10.1016/j.solmat.2006.06.019_bib7
  publication-title: J. Non-Cryst. Solids
  doi: 10.1016/0022-3093(83)90284-3
  contributor:
    fullname: Matsuda
– volume: 266–269
  start-page: 84
  year: 2000
  ident: 10.1016/j.solmat.2006.06.019_bib6
  publication-title: J. Non-Cryst. Solids
  doi: 10.1016/S0022-3093(99)00744-9
  contributor:
    fullname: Kondo
– volume: 42
  start-page: L901
  year: 2003
  ident: 10.1016/j.solmat.2006.06.019_bib8
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.42.L901
  contributor:
    fullname: Matsui
– volume: 69
  start-page: 169
  year: 1999
  ident: 10.1016/j.solmat.2006.06.019_bib3
  publication-title: Appl. Phys. A
  doi: 10.1007/s003390050987
  contributor:
    fullname: Keppner
– volume: 69
  start-page: 1373
  year: 1996
  ident: 10.1016/j.solmat.2006.06.019_bib10
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.117440
  contributor:
    fullname: Torres
– volume: 266–269
  start-page: 1082
  year: 2000
  ident: 10.1016/j.solmat.2006.06.019_bib1
  publication-title: J. Non-Cryst. Solids
  doi: 10.1016/S0022-3093(99)00907-2
  contributor:
    fullname: Yamamoto
– volume: 62
  start-page: 97
  year: 2000
  ident: 10.1016/j.solmat.2006.06.019_bib4
  publication-title: Sol. Energy Mater. Sol. Cells
  doi: 10.1016/S0927-0248(99)00140-3
  contributor:
    fullname: Vetterl
– ident: 10.1016/j.solmat.2006.06.019_bib2
– volume: 41
  start-page: 5912
  year: 2002
  ident: 10.1016/j.solmat.2006.06.019_bib5
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.41.5912
  contributor:
    fullname: Nasuno
– ident: 10.1016/j.solmat.2006.06.019_bib9
SSID ssj0002634
Score 2.1585681
Snippet We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (μc-Si:H)...
We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (pc-Si:H)...
SourceID proquest
crossref
pascalfrancis
elsevier
SourceType Aggregation Database
Index Database
Publisher
StartPage 3199
SubjectTerms Applied sciences
Energy
Exact sciences and technology
High-rate deposition
Hydrogenated microcrystalline silicon
Natural energy
PECVD
Photovoltaic conversion
Solar cell
Solar cells. Photoelectrochemical cells
Solar energy
Title High-rate microcrystalline silicon deposition for p–i–n junction solar cells
URI https://dx.doi.org/10.1016/j.solmat.2006.06.019
https://search.proquest.com/docview/29267939
Volume 90
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LSwMxEA6lXhQRn1gfNQevsZvdNLs5lmKpikXQQm9LdptAi26XbnvwIv4H_6G_xJl9UIuCIGQvIUuWb7Izk-SbGUIureVWySBiZszbTGjfYyhmZjxPaimFbhsMcL4fyP5Q3I7aoxrpVrEwSKssdX-h03NtXfa0SjRb6WTSenQUxlKJwJG54cGAX6w6C2v66m1F83BlfrOMgxmOrsLnco4XiBf8wvJKAhrm2_ndPG2nOgPQbFHt4ofizq1Rb5fslG4k7RRfukdqJtknW9-SCx6QB6RwMMwEQV-QdRfPX8ETxBTchmaTZ1gBCR2birRFwXml6ef7xwSehE7B3OXdGW59KR7vZ4dk2Lt-6vZZWT-BxcIXC2ala51YBm08izGGuxEAr30LFl1pJYIIKwoqjMTFlD1OYKNYR34UyNhq6wjrHZF6MkvMMaHWWOPEsJ_lriO0NcqAH6gxbNVoHruqQVgFW5gWaTLCij82DQuYseKlDLFxGO9X2IZr4g5Bk__xZnNNFKvpAo6bo6BBLirZhPCrIEA6MbNlFrrKlaCO1Mm_Jz8lm_kRDOfM9c5IfTFfmnNwShZRM191TbLRubnrD74Au1zk9g
link.rule.ids 310,311,315,786,790,795,796,4516,23951,23952,24137,25161,27946,27947,45609,45703
linkProvider Elsevier
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LSwMxEA5VDyoiPvHdHLzGbnbTbHIUUeqjRVDBW8huE2jRbXHrwYv4H_yH_hJn9oEWBUHIXkKWLDPZmS_JNzOEHHrPvZYqYa7P20zYOGKoZuaiSFophW07DHDu9mTnTlzct-8b5KSOhUFaZWX7S5teWOuqp1VJszUeDFo3gcZYKqECWTgeNUPmAA0EuLSPXr94HqEsrpZxNMPhdfxcQfIC_QIwrO4koGHCnd_909LY5iA1X5a7-GG5C3d0tkKWKxxJj8tPXSUNl62RxW_ZBdfJNXI4GKaCoI9Iu0ufXgAKYg5uR_PBAyyBjPZdzdqigF7p-OPtfQBPRofg74ruHPe-FM_38w1yd3Z6e9JhVQEFlopYTJiXoQ9Sqdp4GOMcDxOQvI09uHRttVAJlhTUGIqLOXsC5ZPUJnGiZOqtD4SPNslsNsrcFqHeeReksKHlYSCsd9oBELQYt-osT0O9TVgtNjMu82SYmkA2NKWYseSlNNg4jI9r2ZopfRsw5X-8eTCliq_pFMfdkdomzVo3Bv4VFJDN3Og5N6EOJdgjvfPvyZtkvnPbvTJX573LXbJQnMdwzsJoj8xOnp7dPiCUSXJQrMBPGX_miw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=proceeding&rft.title=Solar+energy+materials+and+solar+cells&rft.atitle=High-rate+microcrystalline+silicon+deposition+for+p-i-n+junction+solar+cells&rft.au=MATSUI%2C+Takuya&rft.au=MATSUDA%2C+Akihisa&rft.au=KONDO%2C+Michio&rft.date=2006-11-23&rft.pub=Elsevier&rft.issn=0927-0248&rft.eissn=1879-3398&rft.volume=90&rft.issue=18-19&rft.spage=3199&rft.epage=3204&rft_id=info:doi/10.1016%2Fj.solmat.2006.06.019&rft.externalDBID=n%2Fa&rft.externalDocID=18159748
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0927-0248&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0927-0248&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0927-0248&client=summon