Length-scale-dependent stress relief mechanisms in indium at high homologous temperatures
Nanoindentation and electron microscopy have been used to examine the length-scale-dependent stress relaxation mechanisms in well-annealed, high-purity indium at a homologous temperature of 0.69. The experimental methods, analysis, and observations serve as a stepping stone in identifying the stress...
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Published in | Journal of materials research Vol. 36; no. 12; pp. 2444 - 2455 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Cham
Springer International Publishing
28.06.2021
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Nanoindentation and electron microscopy have been used to examine the length-scale-dependent stress relaxation mechanisms in well-annealed, high-purity indium at a homologous temperature of 0.69. The experimental methods, analysis, and observations serve as a stepping stone in identifying the stress relaxation mechanisms enabling the formation and growth of metallic dendrites originating at the buried interface between a metallic anode and a solid electrolyte separator. Indium’s load–displacement data are found to be very similar to that of high-purity lithium. Residual hardness impressions show two distinct surface morphologies. Based on these morphologies, the measured hardness, and the estimated pile-up volume, it is proposed that residual impressions exhibiting significant pile-up are the result of deformation dominated by interface diffusion. Alternatively, impressions with no significant pile-up are taken to be the result of shear-driven dislocation glide. An analytical model is presented to rationalize the pile-up profile using interface diffusion. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0884-2914 2044-5326 |
DOI: | 10.1557/s43578-021-00186-6 |