Synthesis of multi-layer graphene films on copper tape by atmospheric pressure chemical vapor deposition method

Graphene films were successfully synthesized by atmospheric pressure chemical vapor deposition (APCVD) method. Methane (CH4) gas and copper (Cu) tapes were used as a carbon source and a catalyst, respectively. The CVD temperature and time were in the range of 800-1000 °C and 10 s to 45 min, respecti...

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Published inAdvances in natural sciences. Nanoscience and nanotechnology Vol. 4; no. 3; pp. 35012 - 1-5
Main Authors Nguyen, Van Tu, Le, Huu Doan, Nguyen, Van Chuc, Tam Ngo, Thi Thanh, Le, Dinh Quang, Nguyen, Xuan Nghia, Phan, Ngoc Minh
Format Journal Article
LanguageEnglish
Published IOP Publishing 25.06.2013
Subjects
Atmospheric pressure
atmospheric pressure chemical vapor deposition
Barometric pressure
CATALYSTS
CHEMICAL VAPOR DEPOSITION
Copper
Cu tape
DEPOSITION
Graphene
MICA
MICROSTRUCTURES
Nanostructure
PRESSURE
Scanning electron microscopy
TAPE
VAPOR DEPOSITION
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Summary:Graphene films were successfully synthesized by atmospheric pressure chemical vapor deposition (APCVD) method. Methane (CH4) gas and copper (Cu) tapes were used as a carbon source and a catalyst, respectively. The CVD temperature and time were in the range of 800-1000 °C and 10 s to 45 min, respectively. The role of the CVD temperature and time on the growth of graphene films was investigated in detail via scanning electron microscopy (SEM) and Raman spectroscopy techniques. The results of SEM images and Raman spectra show that the quality of the graphene films was improved with increasing of CVD temperature due to the increase of catalytic activity.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:2043-6262
2043-6254
2043-6254
2043-6262
DOI:10.1088/2043-6262/4/3/035012