Effect of thermal treatment on ZnO substrate for epitaxial growth

ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially in optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being develop...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 15; no. 6; pp. 373 - 378
Main Authors XING GU, SABUKTAGIN, Shariar, TEKE, A. L. I, JOHNSTONE, Daniel, MORKOC, Hadis, NEMETH, Bill, NAUSE, Jeff
Format Journal Article
LanguageEnglish
Published Norwell, MA Springer 01.06.2004
Springer Nature B.V
Subjects
Annealing
Cross-disciplinary physics: materials science; rheology
Damage
Emitters (electron)
Epitaxial growth
Exact sciences and technology
Gallium nitrides
Materials science
Mechanical polishing
Metallurgy
Methods of crystal growth; physics of crystal growth
Physics
Zinc oxide
Scratching test
Atomic force microscopy
Mechanical polishing
Annealing
Inorganic compounds
Semiconductor materials
Thermal method
Gallium nitrides
Epitaxy
Transition element compounds
Photoluminescence
XRD
Heat treatments
Optical properties
Mismatch lattice
Piezoelectricity
Surface damage
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Summary:ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially in optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. A thermal treatment method has been developed to eliminate surface damage on the 0 face of ZnO (000bar1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (000bar1) annealed at 1050 C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution XRD measurements were used to investigate the effect of annealing on ZnO substrates. 19 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0957-4522
1573-482X
DOI:10.1023/B:JMSE.0000025681.89561.13