Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we de...

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Published inScientific reports Vol. 10; no. 1; p. 4757
Main Authors Lin, Hsiang-Ting, Hsu, Kung-Shu, Chang, Chih-Chi, Lin, Wei-Hsun, Lin, Shih-Yen, Chang, Shu-Wei, Chang, Yia-Chung, Shih, Min-Hsiung
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 16.03.2020
Nature Publishing Group
Subjects
639/624/1020/1093
639/624/399/1017
639/624/399/1022
639/624/399/1098
Gallium
Gallium antimonide
Gallium arsenide
Humanities and Social Sciences
Lasers
multidisciplinary
Photons
Science
Science (multidisciplinary)
Thermal stability
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Abstract The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114 K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.
AbstractList Abstract The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114 K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.
The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114 K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.
ArticleNumber 4757
Author Chang, Chih-Chi
Lin, Wei-Hsun
Lin, Hsiang-Ting
Lin, Shih-Yen
Hsu, Kung-Shu
Chang, Shu-Wei
Shih, Min-Hsiung
Chang, Yia-Chung
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  surname: Chang
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  givenname: Min-Hsiung
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  email: mhshih@gate.sinica.edu.tw
  organization: Research Center for Applied Sciences (RCAS), Academia Sinica, Department of Photonics and Institute of Electro-optical Engineering, National Chiao Tung University, Department of Photonics, National Sun Yat-sen University
BackLink https://www.ncbi.nlm.nih.gov/pubmed/32179783$$D View this record in MEDLINE/PubMed
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Snippet The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this...
Abstract The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal...
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SubjectTerms 639/624/1020/1093
639/624/399/1017
639/624/399/1022
639/624/399/1098
Gallium
Gallium antimonide
Gallium arsenide
Humanities and Social Sciences
Lasers
multidisciplinary
Photons
Science
Science (multidisciplinary)
Thermal stability
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Title Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material
URI https://link.springer.com/article/10.1038/s41598-020-61539-5
https://www.ncbi.nlm.nih.gov/pubmed/32179783
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https://pubmed.ncbi.nlm.nih.gov/PMC7075894
Volume 10
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