Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

• Published in: Scientific reports Vol. 10; no. 1; p. 4757
• Main Authors: Lin, Hsiang-Ting, Hsu, Kung-Shu, Chang, Chih-Chi, Lin, Wei-Hsun, Lin, Shih-Yen, Chang, Shu-Wei, Chang, Yia-Chung, Shih, Min-Hsiung
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 16.03.2020; Nature Publishing Group
• Subjects: 639/624/1020/1093; 639/624/399/1017; 639/624/399/1022; 639/624/399/1098; Gallium; Gallium antimonide; Gallium arsenide; Humanities and Social Sciences; Lasers; multidisciplinary; Photons; Science; Science (multidisciplinary); Thermal stability
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-020-61539-5

The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114 K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.