Large area MoS2 thin film growth by direct sulfurization
Abstract In this study, we present the growth of monolayer MoS 2 (molybdenum disulfide) film. Mo (molybdenum) film was formed on a sapphire substrate through e-beam evaporation, and triangular MoS 2 film was grown by direct sulfurization. First, the growth of MoS 2 was observed under an optical micr...
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Published in | Scientific reports Vol. 13; no. 1; p. 8378 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group
24.05.2023
Nature Publishing Group UK Nature Portfolio |
Subjects | |
Online Access | Get full text |
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Summary: | Abstract
In this study, we present the growth of monolayer MoS
2
(molybdenum disulfide) film. Mo (molybdenum) film was formed on a sapphire substrate through e-beam evaporation, and triangular MoS
2
film was grown by direct sulfurization. First, the growth of MoS
2
was observed under an optical microscope. The number of MoS
2
layers was analyzed by Raman spectrum, atomic force microscope (AFM), and photoluminescence spectroscopy (PL) measurement. Different sapphire substrate regions have different growth conditions of MoS
2
. The growth of MoS
2
is optimized by controlling the amount and location of precursors, adjusting the appropriate growing temperature and time, and establishing proper ventilation. Experimental results show the successful growth of a large-area single-layer MoS
2
on a sapphire substrate through direct sulfurization under a suitable environment. The thickness of the MoS
2
film determined by AFM measurement is about 0.73 nm. The peak difference between the Raman measurement shift of 386 and 405 cm
−1
is 19.1 cm
−1
, and the peak of PL measurement is about 677 nm, which is converted into energy of 1.83 eV, which is the size of the direct energy gap of the MoS
2
thin film. The results verify the distribution of the number of grown layers. Based on the observation of the optical microscope (OM) images, MoS
2
continuously grows from a single layer of discretely distributed triangular single-crystal grains into a single-layer large-area MoS
2
film. This work provides a reference for growing MoS
2
in a large area. We expect to apply this structure to various heterojunctions, sensors, solar cells, and thin-film transistors. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-023-35596-5 |