Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states

• Published in: Surface and interface analysis Vol. 40; no. 3-4; pp. 423 - 426
• Main Authors: Kimura, Kenji, Nakajima, Kaoru, Zhao, Ming, Nohira, Hiroshi, Hattori, Takeo, Kobata, Masaaki, Ikenaga, Eiji, Kim, Jung Jin, Kobayashi, Keisuke, Conard, Thierry, Vandervorst, Wilfried
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Chichester, UK John Wiley & Sons, Ltd 01.03.2008; Wiley
• Subjects: angle-resolved XPS; combination analysis; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; depth profiling; Exact sciences and technology; high-resolution RBS; Physics; RBS; Angular resolution; depth profiling; angle-resolved XPS; combination analysis; high-resolution RBS; Depth profiles; X-ray photoelectron spectra
• ISSN: 0142-2421; 1096-9918
• DOI: 10.1002/sia.2628

A new method for the combination analysis of high‐resolution Rutherford backscattering spectroscopy (HRBS) and angle‐resolved X‐ray photoelectron spectroscopy (AR‐XPS) is proposed for accurate depth profiling of chemical states. In this method, attenuation lengths (ALs) for the photoelectrons are first determined so that the AR‐XPS result is consistent with the HRBS result. Depth profiling of the chemical states are then performed in the AR‐XPS analysis using the composition‐depth profiles obtained by HRBS as constrained conditions. This method is successfully applied to Hf‐based gate stack structures demonstrating its feasibility. Copyright © 2008 John Wiley & Sons, Ltd.