Growth of ZnO Nanorods by the Chemical Solution Method with Assisted Electrical Field
Zinc oxide (ZnO) nanorod arrays on the ZnO‐coated seed substrates were prepared by the solution chemical method from Zn(NO3)2/NaOH under an assisted electrical field. The influence of the electrical field on ZnO nanorod growth was primarily explored, and the positive effects of the electrical field...
Saved in:
Published in | Journal of the American Ceramic Society Vol. 89; no. 8; pp. 2654 - 2659 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Malden, USA
Blackwell Publishing Inc
01.08.2006
Blackwell Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Zinc oxide (ZnO) nanorod arrays on the ZnO‐coated seed substrates were prepared by the solution chemical method from Zn(NO3)2/NaOH under an assisted electrical field. The influence of the electrical field on ZnO nanorod growth was primarily explored, and the positive effects of the electrical field were demonstrated by adding polyethylene glycol in growth solution. It has been proved that the electrical field enhances ion adsorption to the substrate and lowers the nucleation energy barrier by increasing charge intensity; meanwhile, it produces H+ through oxidation of OH− and increases properly the degree of solution supersaturation near the substrate surface. XRD results show that the nanorods grown under the electrical field primarily have a zincite structure. With increasing precursor concentration, the average diameter and length of ZnO nanorods increase. The maximum rod growth rate at a given concentration of Zn2+ ion occurs at a specific temperature. |
---|---|
Bibliography: | istex:89E4736D4974B0F3A850015484984C68A31E6914 ArticleID:JACE01103 ark:/67375/WNG-X0785S7X-H M. Paranthaman—contributing editor This work was supported by Natural Science Foundation of Tianjin (Project No.: 033802311). ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/j.1551-2916.2006.01103.x |