Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
Abstract Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an...
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Published in | Scientific reports Vol. 11; no. 1; p. 22266 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group
15.11.2021
Nature Publishing Group UK Nature Portfolio |
Subjects | |
Online Access | Get full text |
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Summary: | Abstract
Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P
$$_{\mathrm{R}}$$
R
= 47
$$\upmu$$
μ
C/cm
$$^{2}$$
2
is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-021-01724-2 |