An image interaction approach to quantum-phase engineering of two-dimensional materials

• Published in: Nature communications Vol. 13; no. 1; p. 5175
• Main Authors: Di Giulio, Valerio, Gonçalves, P. A. D., García de Abajo, F. Javier
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group 02.09.2022; Nature Publishing Group UK; Nature Portfolio
• Subjects: Electric contacts; Electrons; Engineering; Gating; Hybridization; Image acquisition; Insulators; Interlayers; Material properties; Metal-insulator transition; Nanotechnology devices; Optical properties; Thermal properties; Thermodynamic properties; Tuning; Two dimensional materials
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-022-32508-5

Abstract Tuning electrical, optical, and thermal material properties is central for engineering and understanding solid-state systems. In this scenario, atomically thin materials are appealing because of their sensitivity to electric and magnetic gating, as well as to interlayer hybridization. Here, we introduce a radically different approach to material engineering relying on the image interaction experienced by electrons in a two-dimensional material when placed in proximity of an electrically neutral structure. We theoretically show that electrons in a semiconductor atomic layer acquire a quantum phase resulting from the image potential induced by the presence of a neighboring periodic array of conducting ribbons, which in turn modifies the optical, electrical, and thermal properties of the monolayer, giving rise to additional interband optical absorption, plasmon hybridization, and metal-insulator transitions. Beyond its fundamental interest, material engineering based on the image interaction represents a disruptive approach to tailor the properties of atomic layers for application in nanodevices.