An updated temperature-dependent breakdown coupling model including both impact ionization and tunneling mechanisms for AlGaAs/InGaAs HEMTs
An updated model on the temperature dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for HEMTs is presented in this paper. This model depicts the interplay between TFE and II mechanisms. Examples of temperature dependence of reverse...
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| Published in | IEEE transactions on electron devices Vol. 49; no. 9; pp. 1675 - 1678 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
01.09.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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| Abstract | An updated model on the temperature dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for HEMTs is presented in this paper. This model depicts the interplay between TFE and II mechanisms. Examples of temperature dependence of reverse gate current are discussed. It is important that the coupling mechanism between TFE and II at elevated temperature should be considered, particularly when designing devices for high-power applications. |
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| AbstractList | An updated model on the temperature dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for HEMTs is presented in this paper. This model depicts the interplay between TFE and II mechanisms. Examples of temperature dependence of reverse gate current are discussed. It is important that the coupling mechanism between TFE and II at elevated temperature should be considered, particularly when designing devices for high-power applications An updated model on the temperature dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for HEMTs is presented in this paper. This model depicts the interplay between TFE and II mechanisms. Examples of temperature dependence of reverse gate current are discussed. It is important that the coupling mechanism between TFE and II at elevated temperature should be considered, particularly when designing devices for high-power applications. An updated model on the temperature-dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for HEMTs is presented. This model depicts the interplay between TFE and II mechanisms. Examples of the temperature dependence of the reverse gate current are discussed. It is important that the coupling mechanism between TFE and II at elevated temperatures should be considered, particularly when designing devices for high-power applications. (Author) |
| Author | Li, H.P. Ray, M. Hartin, O.L. |
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| Cites_doi | 10.1109/T-ED.1980.19979 10.1109/22.234507 10.1016/0038-1101(89)90158-5 10.1109/16.59905 10.1109/16.337438 10.1109/T-ED.1981.20467 10.1109/55.119188 10.1109/IEDM.1996.553118 10.1109/16.239781 10.1049/el:19921179 10.1049/el:19911185 10.1109/55.144979 10.1016/S0038-1101(97)00264-5 10.1109/GAAS.1995.528971 10.1109/ICIPRM.1997.600091 10.1109/16.370041 10.1109/3.880657 10.1109/IEDM.1996.553116 |
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| References | ref13 ref12 ref15 brown (ref2) 1993; 40 ref14 ieong (ref22) 1998 ref10 ref17 zheng (ref24) 2000; 36 ref16 ref19 matloubian (ref4) 1999 ise-dessis (ref21) 0 sze (ref23) 1981 ref20 itoh (ref1) 1985 huang (ref9) 1993; 41 wemple (ref18) 1980; 27 bahl (ref11) 1992; 13 ref8 ref7 chang (ref25) 1981; ed 28 ref3 ref6 ref5 |
| References_xml | – volume: 27 start-page: 1013 year: 1980 ident: ref18 article-title: control of gate-drain avalanche in gaas mesfet's publication-title: IEEE Transactions on Electron Devices doi: 10.1109/T-ED.1980.19979 contributor: fullname: wemple – volume: 41 start-page: 752 year: 1993 ident: ref9 article-title: an algaas/ingaas phemt with improved breakdown voltage for x- and ku-band power applications publication-title: IEEE Trans Microwave Theory and Techniques doi: 10.1109/22.234507 contributor: fullname: huang – year: 0 ident: ref21 publication-title: ISE Integrated Syst Eng AG contributor: fullname: ise-dessis – ident: ref19 doi: 10.1016/0038-1101(89)90158-5 – ident: ref6 doi: 10.1109/16.59905 – ident: ref17 doi: 10.1109/16.337438 – ident: ref20 doi: 10.1109/T-ED.1981.20467 – ident: ref8 doi: 10.1109/55.119188 – volume: ed 28 start-page: 962 year: 1981 ident: ref25 article-title: analytic theory for current-voltage characteristics and field distribution of gaas mesfets publication-title: IEEE Transn Electron Devices contributor: fullname: chang – ident: ref12 doi: 10.1109/IEDM.1996.553118 – volume: 40 start-page: 2111 year: 1993 ident: ref2 article-title: study of the dependence of ga $_{0.47}$in$_{0.53}$as/al $_{x}$in$_{1-x}$as power hemt breakdown voltage on schottky layer design and device layout publication-title: IEEE Transn Electron Devices doi: 10.1109/16.239781 contributor: fullname: brown – ident: ref7 doi: 10.1049/el:19921179 – ident: ref3 doi: 10.1109/16.239781 – ident: ref5 doi: 10.1049/el:19911185 – year: 1981 ident: ref23 publication-title: Physics of Semiconductor Devices contributor: fullname: sze – start-page: 733 year: 1998 ident: ref22 article-title: comparison of raised and schottky source/drain mosfets using a novel tunneling contact model publication-title: IEDM Tech Dig contributor: fullname: ieong – volume: 13 start-page: 123 year: 1992 ident: ref11 article-title: breakdown voltage enhancement from channel quantization in inalas/n$+$-ingaas hfets publication-title: IEEE Electron Devices Lett doi: 10.1109/55.144979 contributor: fullname: bahl – ident: ref14 doi: 10.1016/S0038-1101(97)00264-5 – ident: ref10 doi: 10.1109/GAAS.1995.528971 – ident: ref15 doi: 10.1109/ICIPRM.1997.600091 – ident: ref16 doi: 10.1109/16.370041 – volume: 36 start-page: 1168 year: 2000 ident: ref24 article-title: temperature dependence of the ionization coefficients of al$_{x}$ga$_{1-x}$ as publication-title: IEEE J Quantum Electronics doi: 10.1109/3.880657 contributor: fullname: zheng – start-page: 571 year: 1985 ident: ref1 article-title: depletion- and enhancement-mode al0.48in0.52as/ga0.47in0.53as modulation-doped field-effect transistors with a recessed gate structure publication-title: Gallium Arsenide Rel Compounds contributor: fullname: itoh – start-page: 721 year: 1999 ident: ref4 article-title: high power and high efficiency alinas/gainas on inp hemts publication-title: IEEE MTT-S Symp Tech Dig contributor: fullname: matloubian – ident: ref13 doi: 10.1109/IEDM.1996.553116 |
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| Snippet | An updated model on the temperature dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for... An updated model on the temperature-dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for... |
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| SubjectTerms | Aluminum compounds Aluminum gallium arsenides Breakdown Devices Gallium compounds High electron mobility transistors Impact ionization Indium compounds Indium gallium arsenides Ionization Joining MODFETs Power MODFETs Semiconductor device modeling Semiconductor devices Thermionic emission |
| Title | An updated temperature-dependent breakdown coupling model including both impact ionization and tunneling mechanisms for AlGaAs/InGaAs HEMTs |
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