An updated temperature-dependent breakdown coupling model including both impact ionization and tunneling mechanisms for AlGaAs/InGaAs HEMTs

An updated model on the temperature dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for HEMTs is presented in this paper. This model depicts the interplay between TFE and II mechanisms. Examples of temperature dependence of reverse...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 49; no. 9; pp. 1675 - 1678
Main Authors Li, H.P., Hartin, O.L., Ray, M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.09.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aluminum compounds
Aluminum gallium arsenides
Breakdown
Devices
Gallium compounds
High electron mobility transistors
Impact ionization
Indium compounds
Indium gallium arsenides
Ionization
Joining
MODFETs
Power MODFETs
Semiconductor device modeling
Semiconductor devices
Thermionic emission
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Summary:An updated model on the temperature dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for HEMTs is presented in this paper. This model depicts the interplay between TFE and II mechanisms. Examples of temperature dependence of reverse gate current are discussed. It is important that the coupling mechanism between TFE and II at elevated temperature should be considered, particularly when designing devices for high-power applications.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2002.802651