Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride
The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si 3 N 4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conf...
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Published in | Philosophical magazine letters Vol. 84; no. 12; pp. 755 - 762 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Taylor & Francis Group
01.12.2004
Taylor & Francis |
Subjects | |
Online Access | Get full text |
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Summary: | The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si
3
N
4
specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si
3
N
4
grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0950-0839 1362-3036 |
DOI: | 10.1080/09500830500041302 |