Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride

The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si 3 N 4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conf...

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Bibliographic Details
Published inPhilosophical magazine letters Vol. 84; no. 12; pp. 755 - 762
Main Authors Winkelman, G. B., Dwyer, C., Hudson, T. S., Nguyen-Manh, D., Döblinger, M., Satet, R. L., Hoffmann, M. J., Cockayne, D. J. H.
Format Journal Article
LanguageEnglish
Published London Taylor & Francis Group 01.12.2004
Taylor & Francis
Subjects
Exact sciences and technology
Physics
Interfaces
Grain boundaries
Polycrystals
Silicon nitrides
Scanning transmission electron microscopy
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Summary:The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si 3 N 4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si 3 N 4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0950-0839
1362-3036
DOI:10.1080/09500830500041302